B-Mount with SemiNex Laser Diode
Part Number: B-123-134
SemiNex's B-Mounted Laser Diodes are an excellent choice for customers seeking state-of-art performance in a low cost submount design. These lasers are provided across the InP wavelength range of 12xx to 19xx and come in a variety of power, wavelength and lensed configurations. Applications for SemiNex's sub mounted lasers include OEM medical, consumer medical, LiDAR, Military targeting, range finding and illumination. Custom wavelengths and configurations available upon request.
Grin Lens f=274um used to match fast axis divergence to slow axis divergence.
Wavelength: 1380 nm
Power: 5.4 W CW
Aperture: 95 um
Mode: Multi Mode
Cavity Length: 2500 µm
Lens Matched f=274um, 5mm Lg
Symbol
Value
Units
Optical
Wavelength
λc
1380
nm(+/-20)
Output Power (CW)
Po
5.4
watts
Spectral Width
Δλ
15
nm 3dB
Cavity Length
CL
2500
μm
Emitter Width
W
95
μm
Emitter Height
H
1
μm
Temp. Coefficient
Δλ/ΔλT
0.55
nm/C
Slope Efficiency
ηo
0.45
W/A
Slow Axis Divg.
θ_parallel
9
deg FWHM
Fast Axis Divg.
θ_perp
9
deg FWHM
Number of emitters
1
Duty Cycle
DC
100
%
Lens Effec. Focal Length
f
274
μm
Included Part Option
Lens Matched f=274um, 5mm Lg
Electrical
Power Conversion Eff.
η
23
Min
Threshold Current
Ith
0.5
A
Operating Current
Iop
14
A
Operating Voltage
Vop
1.8
V
Series Resistance
Rs
0.05
ohm
Mechanical
Lead Soldering Temp.
250
°C
Storage Temp.
-40 to 80
°C
Weight
0.5
g
Operating Temp.
-40 to 60
°C
Laser Engine Misc
LE X Axis Divergence
θ_X
9
deg FWHM
LE Y Axis Divergence
θ_Y
9
deg FWHM
Other
Specified values are rated at a constant heat sink temperature of 20oC.
商品属性 [波长] 1380nm [功率] 5.4 W CW