Chip - Bare laser diode die
Part Number: CHP-194
SemiNex's Laser Diodes are an excellent choice for customers seeking state-of-art performance for laser development and customer applications. These laser chips are provided across the InP wavelength range of 12xx to 19xx and come in a variety of power, cavity configurations and wavelength configurations. SemiNex can mount any of its laser die in SemiNex standard packages or SemiNex will work with customers to develop custom packaging Applications for SemiNex's chips include OEM medical, consumer medical, LiDAR, Military targeting, range finding and illumination. Custom wavelengths and configurations available upon request.
Wavelength: 1532 nm
Power: 0.6 W CW
Aperture: 4 um
Mode: Single Mode
Cavity Length: 2500 µm
Symbol
Value
Units
Optical
Wavelength
λc
1532
nm(+/-20)
Output Power (CW)
Po
0.6
watts
Spectral Width
Δλ
15
nm 3dB
Cavity Length
CL
2500
μm
Emitter Width
W
4
μm
Emitter Height
H
1
μm
Temp. Coefficient
Δλ/ΔλT
0.55
nm/C
Slow Axis Divg.
θ_parallel
13
deg FWHM
Fast Axis Divg.
θ_perp
30
deg FWHM
Number of emitters
1
Duty Cycle
DC
100
%
Electrical
Power Conversion Eff.
η
14
Min
Threshold Current
Ith
0.05
A
Operating Current
Iop
1.8
A
Operating Voltage
Vop
3.6
V
Series Resistance
Rs
1
ohm
Mechanical
Lead Soldering Temp.
250
°C
Storage Temp.
-40 to 80
°C
Operating Temp.
-40 to 60
°C
Laser Engine Misc
LE X Axis Divergence
θ_X
30
deg FWHM
LE Y Axis Divergence
θ_Y
13
deg FWHM
Other
Specified values are rated at a constant heat sink temperature of 20oC.
CW As measured on a C-Mount with Indium solder.
商品属性 [波长] 1532 nm [功率] 0.6 W CW