2 GHz High-Speed Amplifier
Features
Bandwidth 10 kHz ... 1.9 GHz
Rise Time 185 ps
Gain 40 dB (5 kV/A)
Input VSWR 1 : 1.2
Integrated Bias Circuit
Monitor Output
Two identical Signal Outputs
Applications
Preamplifier for ultra-fast Detectors (Microchannel-Plates, Photomultipliers, Avalanche-Photodiodes, PIN-Photodiodes etc.)
Oscilloscope and Transient-Recorder Preamplifier
Time-Resolved Pulse and Transient Measurements
Block Diagram
Specifications
Test Conditions
Vs = ± 15 V, Ta = 25°C, System Impedance = 50 Ω
Gain
Gain
40 dB (5 kV/A)
Gain Accuracy
± 1 dB
Gain Flatness
± 0.2 dB
Frequency Response
Lower Cut-Off Frequency
10 kHz
Upper Cut-Off Frequency
1.9 GHz
Time Response
Rise / Fall Time (10% - 90%)
185 ps
Input
DC Input Impedance
50 Ω
RF Input Impedance
50 Ω
50 Ω Noise Figure
4.9 dB (@ f < 1 GHz)
Equivalent Input Voltage Noise
650 pV/√Hz (@ f < 1 GHz)
Equivalent Input Current Noise
13 pA/√Hz (@ f < 1 GHz)
Input VSWR
1 : 1.2 (@ f < 1.5 GHz)
Maximum Input VSWR
1 : 1.45 (@ f < 3 GHz)
Output
Two identical Signal Outputs:
Output Impedance
50 Ω
Maximum Output VSWR
1 : 1.8 (@ f < 3 GHz)
Output Power
P1dB + 12 dBm (@ f < 1 GHz)
Output Peak-Peak Voltage
1.7 Vpp (@ f < 500 MHz, for linear Amplification)
Isolation between Outputs
20 dB (@ f < 3 GHz)
Monitor Amplifier Gain
26 dB (1 kV/A)
Lower Cut-Off Frequency
DC
Upper Cut-Off Frequency
100 kHz
Output Voltage
± 10 V (@ 10kΩ load)
Power Supply
Supply Voltage
± 15 V
Supply Current
+ 185 / -10 mA
Case
Weight
180 gr. (0.41 lbs)
Material
AlMg4.5Mn, nickel-plated
Temperature Range
Storage Temperature
- 40 ... + 100 °C
Operating Ambient Temperature
0 ... + 60 °C
Operating Case Temperature
40 °C (@ Ta = 25 °C)
Absolute Maximum Ratings
Power Supply Voltage
± 20 V
DC and LF Input Voltage
± 4 V
RF Input Power
+ 13 dBm
Connectors
Input
SMA
Signal Outputs
SMA
Monitor
Output
BNC
Power Supply
LEMO Series 1S, 3-pin fixed Socket
Pin 1: + 15 V
Pin 2: – 15 V
Pin 3: GND
Dimensions
商品属性 [频率] 10 kHz ... 1.9 GHz [上升时间] 185 ps