SINGLE FREQUENCY LASER DIODES
Distributed Feedback Laser
General Product Information
Product
785 nm DFB Laser Raman
with hermetic TO Package (RoHS compliant)
including Monitor Diode Interferometry
Application
Spectroscopy
Metrology
Absolute Maximum Ratings
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Storage Temperature
TS
°C
-40
85
Stress in excess of one of the Absolute Maximum
Ratings may damage the laser. Please note that a
damaging optical power level may occur although
the maximum current is not reached. These are
stress ratings only, and functional operation at
these or any other conditions beyond those
indicated under Recommended Operational
Conditions is not implied.
Operational Temperature at Case
TC
°C
-20
75
Operational Temperature at Laser Chip
TLD
°C
0
50
Forward Current
IF
mA
190
Reverse Voltage
VR
V
2
Output Power
Popt
mW
110
TEC Current
ITEC
A
1.0
TEC Voltage
VTEC
V
1.0
Recommended Operational Conditions
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Operational Temperature at Case
Tcase
°C
-20
65
Operational Temperature at Laser Chip
TLD
°C
15
40
Forward Current
IF
mA
170
Output Power
Popt
mW
20
100
measured with integrating sphere
Characteristics at TLD = 25° C at BOL
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Center Wavelength
λC
nm
784
785
786
Linewidth (FWHM)
△λ
MHz
2
Popt = 100 mW
Sidemode Supression Ratio
SMSR
dB
50
Popt = 100 mW
Temperature Coefficient of Wavelength
dλ / dT
nm / K
0.06
Current Coefficient of Wavelength
dλ / dI
nm / mA
0.003
Characteristics at TLD = 25° C at BOL cont'd
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Laser Current @ Popt = 100 mW
ILD
mA
170
Slope Efficiency
η
W / A
0.6
0.8
1.4
Threshold Current
Ith
mA
70
Divergence parallel (FWHM)
Θ∥
°
5
parallel to Pin 1 - Pin 6 plane
Divergence perpendicular (FWHM)
Θ⊥
°
18
perpendicular to Pin 1 - Pin 6 plane
Degree of Polarization
DOP
%
80
Popt = 100 mW; E field perpendicular to Pin 1 - 6 plane
Monitor Diode
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Monitor Detector Responsivity
Imon / Popt
μA/mW
1
t.b.d.
100
UR = 5 V
Thermoelectric Cooler
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Current
ITEC
A
0.4
Popt = 100 mW, ΔT = 20 K
Voltage
UTEC
V
0.4
Popt = 100 mW, ΔT = 20 K
Power Dissipation (total loss at case)
Ploss
W
0.4
Popt = 100 mW, ΔT = 20 K
Temperature Difference
△T
K
40
Popt = 100 mW, ΔT = |Tcase - TLD|
Thermistor (Standard NTC Type)
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Resistance
R
kΩ
10
TLD = 25° C
Beta Coefficient
β
3930
R1 / R2 = e b (1/T1 - 1/T2) at TLD = 0° … 50° C
Steinhart & Hart Coefficient A
A
1.029 x 10 -3
1/T = A + B(ln R) + C(ln R)3
Steinhart & Hart Coefficient B
B
2.510 x 10 -4
T: temperature in Kelvin
Steinhart & Hart Coefficient C
C
1.051 x 10 -7
R: resistance at T in Ohm
Pin Assignment
1 Laser Diode Anode
5 Thermistor
2 Laser Diode Cathode
6 Thermistor
3 Thermoelectric Cooler (-)
7 Photo Diode Anode
4 Thermoelectric Cooler (+)
8 Photo Diode Cathode
All 8 pins are isolated from case.
Package Drawings
Typical Measurement Results
Performance figures, data and any illustrative material provided in this specification are typical and must be specifically confirmed in writing by eagleyard Photonics before they become applicable to any particular order or contract. In accordance with the eagleyard Photonics policy of continuous improvement specifications may change without notice.
商品属性 [波长] 785nm [功率] 100mW