EYP-RWE-0810-03010-1300-SOT02-0000
GAIN CHIPS
AR coated Fabry-Perot Laser
General Product Information
Product
tunable 810 nm Fabry-Perot Laser
for use in an External Cavity Diode Laser (ECDL)
sealed SOT Housing
Monitor Diode
Application
Spectroscopy
covering popular wavelengths such
as 780 nm, 785 nm and 795 nm
Absolute Maximum Ratings
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Storage Temperature
TS
°C
-40
85
Stess in excess of the Absolute Maximum
Ratings can cause permanent damage to
the device.
Operational Temperature at Case
TC
°C
-20
50
Forward Current
IF
mA
200
Reverse Voltage
VR
V
0
Output Power (extracavity)
Popt
mW
90
Recommended Operational Conditions
Parameter
Symbol
Unit
min
typ
max
Operational Temperature at Case
TC
°C
15
40
Forward Current
IF
mA
180
Characteristics at TC= at 25 °C at BOL, with external cavity
under recommended working condition
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Center Wavelength
λC
nm
800
The actual achieved wavelength and power are
strongly influenced by the external cavity.eyP gives
no guarantee on these parameters.
Tuning Range
Δλtun
nm
780
810
Output Power
Popt
mW
70
Polarization
TM
E field perpendicular to Pin 2 - Pin 3 - plane
Spatial Mode (transversal)
TEM00
Fundamental Mode
Monitor Detector Responsivity
Imon / PASE
μA/mW
1
40
UR MD = 5 V
Chip Parameter
Parameter
Symbol
Unit
min
typ
max
Cavity Length
L
µm
1300
Reflectivity at Front Facet
Rff
3∙10-4
1∙10-3
Package Dimensions
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Height of Emission Plane
h
mm
3.50
3.65
3.70
reference plane: top side of TO header
Excentricity of Emission Center
R
mm
0.12
reference: center of outer diameter of header
Pin Length
LPIN
mm
14
Package Pinout M-type
1 Laser Diode Cathode, Monitor Diode Cathode, Case
2 Photo Diode Anode
3 Laser Diode Anode
Package Drawings
Typical Measurement Results
商品属性 [波长] 780-810nm [功率] 90mW