C30884EH
Silicon Avalanche Photodiode With Very High Modulation Capability
Key Features - High Quantum Efficiency 85% typical at 900 nm 10% typical at 1060nm
- Spectral Response Range (10% Points) 400 to 1100 nm
- Fast Time Response Rise time typically 1 ns Fall time typically 1 ns
- Wide operating Temperature Range -40°C to 70°C
- Hermetically Sealed Low- Profile TO-5 package
Applications
- Optical Communications
- Laser Range Finding
- High Speed Switching Systems
The C30884EH is a silicon avalanche photodiode having high responsivity and fast rise and fall times. Because the fall time characteristic has no “tail”, the responsivity of the device is independent of modulation frequency up to about 400 MHz.
This device is made using a double-diffused “reach-through” structure and is optimized for high responsivity at wavelengths of below 1000 nanometers. The C30884EH is hermetically sealed behind a flat glass window in a modified low-profile TO-5 package.
The fast time response characteristics and high responsivity of this device make it highly useful in a wide variety of applications including optical communications, laser range finding and high-speed switching systems.
Table 1 Mechanical and Optical Characteristics
Parameter
Symbol
Unit
Remarks/Conditions
Photosensitive Surface:
Useful area
Useful diameter
A
d
0.5
0.8
mm²
mm
Shape : Circular
Field of View:
Nominal field of view α (See Figure 7) Nominal field of view α’ (See Figure 7)
FoV
119
132
Degrees
Table 2 Electro-Optical Characteristics
Test conditions: Case Temperature TA = 22 °C; at the DC reverse operating voltage V, Vop supplied with the device3
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Breakdown Voltage
Vbr
190
290
V
Operating Voltage
Vop
180
260
V
Temperature Coefficient of Vopfor Constant Gain1
Vop 1.1 V/°C Gain
M
100
Responsivity
at 900 nm
at 1060 nm
R
55
6
63
8
A/W
Quantum Efficiency
at 900 nm
at 1060 nm
Q.E.
85
10
%
Dark Current2
Id
75
nA
Noise Current
f=10kHz, Δf=1.0Hz
in
1
pA/sqrt(Hz)
Rise/Fall Time, RL = 50Ω:
10% to 90% points
90% to 10% points
tr
rf
1
1
1.5
1.5
ns
Capacitance
Cd
4
6
pF
Series Resistance
15
Ω
Storage Temperature
Tstg
-60
100
°C
Operating Temperature
To
-40
70
°C
Table 3 Maximum Ratings, Absolute Maximum Values
Parameter
Symbol
Maximum
Unit
Remarks/Conditions
Reverse Bias Dark Current
100
µA
Photocurrent
average value
peak value
ip
500
2
µA
mA
For 1 second duration, non-repetitive.
Forward Current
average value
peak value
IF
5
50
mA
For 1 second duration, non-repetitive.
Total power
0.1
W
Dissipation at 22°C
Dimensional Outline
商品属性 [波长] 400 to 1100 nm [封装方式] TO-5