YAG Quadrant and Heated YAG Quadrant Series
Silicon PIN Quadrant Detector
Key Features and Benefits
- High quantum efficiency at 1064 nm
- Wide spectral range
- Crosstalk <1% between elements
- No “dead zones” between quadrants (P-type)
- Linearity over wide dynamic range
- Planar diffused structure
- Package style: Hermetic TO-can
- RoHS-compliant
- Available in N- and P-type configuration
Applications
- Laser spot tracking
- Munition guidance
- Laser seeker head
- Semi-Active Laser (SAL) sensor
Excelitas Technologies’ YAG series of Silicon PIN quadrant detectors are high-performance N-type or P-type Si PIN photodiodes in hermetically sealed TO packages. These photodiodes perform well over the 400 nm to 1100 nm wavelength range, with enhanced IR responsivity, making them ideal for 1064 nm detection applications. For P-type photodiode, a guard ring collects current generated outside the active area, ensuring the current will not contribute to noise. N-type photodiode, given its different structure, is provided with a channel stop that prevents the electrical field extension to the outer edge of the chip ensuring signal integrity and low-noise performance.
The YAG devices are quadrant photodiodes with circular active area with four pie-shaped quadrant sections created from the doping process, each with an isolated signal lead.
These can also be ordered with additional YAG-optimized antireflection coating (-AR suffix) on the window to help further increase the transmission of light through the front window. Also, a resistive heater and thermistor temperature sensor option (-H suffix) can be included within the hermetic enclosure to help further increase the responsivity at the YAG wavelength.
Recognizing that different applications have different performance requirements, Excelitas offers a wide range of customization of these photodiodes to meet your unique design challenges. Various active area, custom device testing and qualification and packaging options (alternative temperature sensor, high-shock resistance packaging, ceramic carrier, custom pin-out configuration, varying pin length, etc.) are among many of the application specific solutions available.
Table 1 – Operating data and specifications at 23˚C (typical performance at 180V reverse voltage bias)
YAG 200*-4AH-***
(note 1)
YAG 444*-4AH-***
(note 2)
YAG-555*-4AH-***
(note 2)
Parameter (See notes 3 and 4)
Min
Typical
Max
Min
Typical
Max
Min
Typical
Max
Units
Number of elements
4
4
4
Active area (per element)
5.1
25
39
mm²
Active area, overall diameter
5.1
11.3
14.1
mm
Spectral range
400-1100
nm
Responsivity (See Figures 3 and 4) at 900 nm
at 1064 nm
at 1064 nm (–AR or –ARH suffix)
0.60
0.44
0.47
0.60
0.44
0.47
0.60
0.44
0.47
A/W
Bandwidth, 50 Ω load
30
30
30
MHz
Rise time, 50 Ω load
12
12
12
ns
Operating voltage (Vop)
0
180
0
180
0
180
V
Breakdown voltage (Vbr)
200
200
200
V
Capacitance
2
10
9
15
12
20
pF
Dark current (Id)
10
50
30
100
50
150
nA
Channel resistance (note 6)
>1
>1
>1
MΩ
Noise current
0.10
0.20
0.20
pA/√Hz
Noise equivalent power (NEP)
900 nm, 1 MHz
1064 nm, 1MHz
0.10
0.15
0.25
0.30
0.25
0.30
pW/√Hz
Response linearity (over 7 decades)
<1%
<1%
<1 %
Crosstalk
<1%
<1%
<1 %
Field of View (See Figure 2)
Nominal view α
Nominal view α’
Nominal view α (-H suffix)
Nominal view α’(-H suffix)
115
155
110
150
115
160
105
160
75
160
35
165
degrees
Heater resistance at 23°C (note 5)
36
40
44
36
40
44
36
40
44
Ohms
Heater peak power (note 5, 7)
4
16.1
16.1
Watt
Heating Time (note 5, 8)
3
5
7
3
5
7
3
5
7
s
Thermistor resistance at 25 ⁰C (note 5)
10±2%
10±2%
10±2%
kOhms
Notes:
1. For YAG-200*-4AH-*** family, values are preliminary.
2. For N type option YAG-444N-4AH-*** and YAG-555N-4AH-***, values are preliminary.
3. Active area and all characteristics are listed per element.
4. Breakdown voltage (Vbr) measurement at 100 µA dark current (Id), in appropriate polarity depending on wafer type.
5. This parameter applies to the Heated YAG families only (-H or -ARH suffix).
6. Channel resistance is the resistance measured between active elements.
7. Peak Power at startup considering: -40°C ambient, 36Ω resistance and maximum heater DC voltage as per Table 2.
8. From 23°C to 70°C with maximum supply on the heater as per Table 2.
Table 2 – Absolute – Maximum Ratings, Limiting Values
YAG-200*-4AH-***
(note 1)
YAG-444*-4AH-***
(note 2)
YAG-555*-4AH-***
(note 2)
Parameter
Min
Max
Min
Max
Min
Max
Units
Environment Temperature
storage, Tstg
operating, TA
operating, TA (-H suffix)
-55
-55
-40
+125
+125
+85
-55
-55
-40
+125
+125
+85
-55
-55
-40
+125
+125
+85
˚C
Heater DC Voltage (note 3)
12
24
24
V
Notes:
1. For YAG-200*-4AH-*** family, values are preliminary.
2. For N type option YAG-444N-4AH-*** and YAG-555N-4AH-***, values are preliminary.
3. No testing has been performed above this voltage (tested under constant DC voltage condition).
Equation – Temperature function of thermistor resistance
Temperature of the detector can be obtained using the Steinhart-Hart equation as described below. Coefficient A, B and C are provided given the type and model of thermistor and the temperature range of interest.
Ordering guide
描述 [描述] Quadrant photodiode of 11.3mm active diameter, with common anode