C30619, C30641, C30642, C30665 and C30723 Series
Large Area InGaAs PIN Photodiodes
Excelitas’ Large Area PIN Diodes are highly sensitive, low capacitance InGaAs diodes that provide high responsivity from 800 nm to 1700 nm. An ultra-low capacitance version for high bandwidth applications is available upon request.
Key Features
- Ultra-low capacitance option
- High responsivity at 1300 nm and 1550 nm
- Active Area diameter from 0.5 mm to 5 mm
- High linearity over large dynamic range
- Available in various, robust TO packages
- Customizations (e.g. TEC attachment) possible
- RoHS compliant
Applications
- Optical Power Meter
- Fiber Optic Test Communication
- Near-IR spectroscopy
- Laser profiling stations
- Instrumentation - LiDAR
All specifications are referring to an ambient temperature of TA = 22 °C, λ = 1550 nm and typical VOP.
Table 1: Key parameters
Parameter
Symbol
Min
Typ
Max
Unit
Operating Voltage1
VOP
0
5
VBD - 5V
V
Spectral Range Dl
800
1700
nm
Peak Responsivity
lpeak
1550
nm
Responsivity
R850
0.10
0.20
A/W
R1300
0.80
0.90
R1550
0.95
1.05
Note 1: The depletion voltage can be substantial higher. To find the best operation point, refer to Figure 8 or contact our experts at Excelitas Technologies.
Table 2: Ordering Information
Parameter
C30619GH
C30641GH
C30642GH
C30665GH
C30723GH
Active Area Shape
Circular
Useful Area
0.2 mm2
0.8 mm2
3.1 mm2
7.0 mm2
19.6 mm2
Useful Diameter
0.5 mm
1.0 mm
2.0 mm
3.0 mm
5.0 mm
Ultra-low capacitance
C30619GH-LC
C30641GH-LC
C30642GH-LC
C30665GH-LC
Single Stage TEC1,3
C30619GH-TC
C30641GH-TC
C30642GH-TC
C30665GH-TC
Double Stage TEC2,3
C30619GH-DTC
C30641GH-DTC
C30642GH-DTC
C30665GH-DTC
Package Type
TO-18
TO-5
TO-8
-TC / -DTC Package
TO-66 flange outline
Window Type
Flat Glass
Note 1: The single stage TEC cools the diode chip to typically 0 °C.
Note 2: The double stage TEC cools the diode chip to typically -20 °C.
Note 3: Adding a TEC to the PIN diode will significantly reduce dark current, dark noise and NEP.
Only available upon special request. Contact our experts at Excelitas for further information.
Table 3: Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Average Forward Current
IF
10
mA
Total Power dissipation
Ptot
100
mW
Average Photocurrent
IP
100
mA
Storage Temperature
TS
-60 … 125
°C
Operating Temperature
TOp
-40 … 85
°C
Soldering Temperature3
TP
260
°C
Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Note 2: Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 3: 5 seconds, leads only
Table 4: Optical Specifications
Parameter
Symbol
Device
Minimum
Typical
Maximum
Units
Rise Time / Fall Time1
tr /tf
C30619GH
1
ns
C30619GH-LC
0.5
C30641GH
5
C30641GH-LC
2
C30642GH
17
C30642GH-LC
9
C30665GH
35
C30665GH-LC
17
C30723GH
117
Bandwidth
f3dB
C30619GH
350
MHz
C30619GH-LC
700
C30641GH
75
C30641GH-LC
150
C30642GH
20
C30642GH-LC
40
C30665GH
10
C30665GH-LC
20
C30723GH
3
Note 1: As estimated by
The following notes apply for all electrical specifications:
Note 1: Dark current measurements are done at VOP = 5 V on C30619GH, C30641GH, C30642GH and C30665GH. On the C30723GH VOP = 1 V.
Note 2: Due to the natural fluctuations of charge carriers the PIN diode will also generate noise when not
illuminated. Since the noise characteristics and hence the signal-to-noise ratio (SNR) are dependant on the bandwidth (f3dB) and operating wavelength (λ) inside the final system the illuminated noise
needs to be considered. Hence the SNR is defined as
with q the charge carrier and P the incident optical power in W.
Note 3: The NEP is specified in dark conditions ad defined as
Note 4: Measured at VOP = 10 mV. Selected devices with higher shunt resistance are available to special order. Contact our experts at Excelitas.
Table 5: Electrical Specification C30619GH, C30619GH-LC, C30619GH-TC/(-DTC)
Parameter
Symbol
Minimum
Typical
Maximum
Units
Breakdown Voltage
VBD
20
V
Capacitance, standard version
C0V
15
pF
C5V
7
C25V
6
Capacitance, ultra-low option
C0V,LC
15
C5V,LC
5
C25V, LC
2
Dark Current1
iD
0.3
20
nA
Dark Noise2
iN
0.02
0.10
pA/√Hz
Noise Equivalent Power3
NEP850
100
fW/√Hz
NEP1300
22
NEP1550
19
Shunt Resistance4
RS
10
MΩ
Table 6: Electrical Specification C30641GH, C30641GH-LC, C30641GH-TC/(-DTC)
Parameter
Symbol
Minimum
Typical
Maximum
Units
Breakdown Voltage
VBD
20
V
Capacitance, standard version
C0V
60
pF
C5V
22
C25V
20
Capacitance, ultra-low option
C0V,LC
60
C5V,LC
18
C25V, LC
9
Dark Current1
iD
1
50
nA
Dark Noise2
iN
0.04
0.15
pA/√Hz
Noise Equivalent Power3
NEP850
200
fW/√Hz
NEP1300
44
NEP1550
38
Shunt Resistance4
RS
5
MΩ
Table 7: Electrical Specification C30642GH, C30642GH-LC, C30642GH-TC/(-DTC)
Parameter
Symbol
Minimum
Typical
Maximum
Units
Breakdown Voltage
VBD
15
V
Capacitance, standard version
C0V
400
pF
C5V
90
C25V
75
Capacitance, ultra-low option
C0V,LC
300
C5V,LC
77
C25V, LC
36
Dark Current1
iD
2
nA
Dark Noise2
iN
0.03
0.15
pA/√Hz
Noise Equivalent Power3
NEP850
250
fW/√Hz
NEP1300
33
NEP1550
29
Shunt Resistance4
RS
2
MΩ
Table 8: Electrical Specification C30665GH, C30665GH-LC, C30665GH-TC/(-DTC)
Parameter
Symbol
Minimum
Typical
Maximum
Units
Breakdown Voltage
VBD
10
V
Capacitance, standard version
C0V
530
pF
C5V
200
C25V
170
Capacitance, ultra-low option
C0V,LC
530
C5V,LC
165
C25V, LC
77
Dark Current1
iD
5
50
nA
Dark Noise2
iN
0.04
0.15
pA/√Hz
Noise Equivalent Power3
NEP850
200
fW/√Hz
NEP1300
44
NEP1550
38
Shunt Resistance4
RS
1
MΩ
Table 9: Electrical Specification C30723GH
Parameter
Symbol
Minimum
Typical
Maximum
Units
Breakdown Voltage
VBD
10
V
Capacitance
C2V
950
pF
Dark Current1
iD
20
nA
Shunt Resistance4
RS
1
MΩ
Figure 7: Typical Quantum Efficiency and Typical
Responsivity vs. Wavelength
Figure 8: Typical Dark Current vs. Temperature
Figure 9: Typical Capacitance vs. Bias Voltage
描述 [描述] Large Area PIN Diodes are highly sensitive, low capacitance InGaAs diodes that provide high responsivity from 800 nm to 1700 nm