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普克尔盒(PCB4Q-C)
BBO POCKELS CELLSBBO Pockels cell are best suited for high repetition rate Q-switching, pulse picking at up to 3 MHz, laser cavity dumping, and pulses coupling into and from regenerative amplifier.Features:minimal piezoelectric ringinglow absorptionceramic aperture is availablebroad transmission range from 200 nm to 2000 nmcompact sizeApplications:high repetition rate DPSS Q-switchhigh repetition rate regenerative amplifier controlcavity dumpingbeam chopperPockels cell are used to change the polarization state of light passing through it when a voltage is applied to the electrodes of electro-optic crystals such as BBO. When used in conjunction with polarizer, Pockels cells can be used as fast optical switches. Typical applications include Q-switching of the laser cavity, laser cavity dumping and coupling light into and from regenerative amplifiers. BBO based Pockels cells can be useful at wavelengths from the UV to more than 2 μm. Low piezoelectric ringing makes these Pockels cells attractive for the control of high-power and high pulse repetition rate lasers. Fast switching electronic drivers properly matched to the cell are available for Q-switching, cavity dumping and other applications. Pockels cells of PCB series are transverse field devices. Low electro-optical coefficient of BBO results in high operating voltages. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length. As a result, smaller aperture devices have lower quarter-wave, however even for 2.5 mm aperture devices the quarter-wave voltage is as high as 4 kV @ 1064 nm. Double crystal design is employed to reduce required voltages and to allow operation in half-wave mode with fast switching times.ModelPCB3SPCB3DPCB3S/25PCB3D/25Clear aperture diameter, mm2.52.52.52.5Crystal size (WxHxL), mm3x3x203x3x203x3x253x3x25Quantity of crystals1212λ/4 voltage (@ 1064 nm), kV DC<3.5<1.8<3.0<1.5Capacitance, pF4646Optical transmission, %>98>98>98>98Contrast ratio 1)>1:1000>1:500>1:1000>1:500Cell size, mmØ25.4x37.2Ø25.4x57.2Ø25.4x42.2Ø25.4x67.2 All crystals for the Pockels cells provided above are coated AR/AR@1064 nm. Other antireflection coatings are available under request. Damage threshold >5 J/cm2 for 10 ns pulses at 1064 nm.ModelPCB4SPCB4DPCB4Q-CClear aperture diameter, mm3.53.53.5Crystal size (WxHxL), mm4x4x204x4x204x4x20Quantity of crystals124λ/4 voltage (@ 1064 nm), kV DC<4.6<2.3< 2 x 1.3Capacitance, pF362×<6Optical transmission, %>98>98>98Contrast ratio 1)>1:1000>1:500>1:500Cell size, mmØ25.4x37.2Ø25.4x57.2Ø25.4x112 All crystals for the Pockels cells provided above are coated AR/AR@1064 nm. Other antireflection coatings are available under request. Damage threshold >5 J/cm2 for 10 ns pulses at 1064 nm.ModelPCB6.3SPCB6.3DPCB8DClear aperture diameter, mm5.85.87.5Crystal size (WxHxL), mm6.3x6.3x206.3x6.3x208x8x20Quantity of crystals122λ/4 voltage (@ 1064 nm), kV DC<7.5<3,8<4.6Capacitance, pF6<8<8Optical transmission, %>98>98>98Contrast ratio 1)>1:1000>1:500>1:500Cell size, mmØ35x42.2Ø35x57.2Ø35x64 All crystals for the Pockels cells provided above are coated AR/AR@1064 nm. Other antireflection coatings are available under request. Damage threshold >5 J/cm2 for 10 ns pulses at 1064 nm.BBO Pockels Cells for 1040 - 1070 nm rangeCODECLEAR APERTUREQUARTER WAVE VOLTAGE*CENTRAL WAVELENGTHAPPLICATIONPCB3S-C-1064ø 2.5 mm<3.5 kV DC1064 nmNd host high power lasersPCB3D-C-1064ø 2.5 mm<1.8 kV DC1064 nmNd host high power lasersPCB3S/25-C-1064ø 2.5 mm<3.0 kV DC1064 nmNd host high power lasersPCB3D/25-C-1064ø 2.5 mm<1.5 kV DC1064 nmNd host high power lasersPCB4S-C-1064ø 3.5 mm<4.6 kV DC1064 nmNd host high power lasersPCB4D-C-1064ø 3.5 mm<2.3 kV DC1064 nmNd host high power lasersPCB4Q-C-1064ø 3.5 mm<2 x 1.3 kV DC1064 nmNd host high power lasersPCB6.3S-C-1064ø 5.8 mm<7.5 kV DC1064 nmNd host high power lasersPCB6.3D-C-1064ø 5.8 mm<3.8 kV DC1064 nmNd host high power lasersBBO Pockels Cells for 1020-1040 nm rangeCODECLEAR APERTUREQUARTER WAVE VOLTAGE*CENTRAL WAVELENGTHAPPLICATIONPCB3S-C-1030ø 2.5 mm<3.4 kV DC1030 nmYb host femtosecond lasersPCB3D-C-1030ø 2.5 mm<1.7 kV DC1030 nmYb host femtosecond lasersPCB3S/25-C-1030ø 2.5 mm<2.9 kV DC1030 nmYb host femtosecond lasersPCB3D/25-C-1030ø 2.5 mm<1.4 kV DC1030 nmYb host femtosecond lasersPCB4S-C-1030ø 3.5 mm<4.5 kV DC1030 nmYb host femtosecond lasersPCB4D-C-1030ø 3.5 mm<2.2 kV DC1030 nmYb host femtosecond lasersPCB4Q-C-1030ø 3.5 mm<2 x 1.2 kV DC1030 nmYb host femtosecond lasersPCB6.3S-C-1030ø 5.8 mm<7.4 kV DC1030 nmYb host femtosecond lasersPCB6.3D-C-1030ø 5.8 mm<3.75 kV DC1030 nmYb host femtosecond lasersBBO Pockels Cells for 770-820 nm rangeCODECLEAR APERTUREQUARTER WAVE VOLTAGE*CENTRAL WAVELENGTHAPPLICATIONPCB3S-C-800ø 2.5 mm<2.6 kV DC800 nmTi:Sapphire femtosecond lasersPCB3D-C-800ø 2.5 mm<1.3 kV DC800 nmTi:Sapphire femtosecond lasersPCB4S-C-800ø 3.5 mm<3.4 kV DC800 nmTi:Sapphire femtosecond lasersPCB4D-C-800ø 3.5 mm<1.7 kV DC800 nmTi:Sapphire femtosecond lasersPCB4Q-C-800ø 3.5 mm<2 x 0.9 kV DC800 nmTi:Sapphire femtosecond lasersPCB3S/25-C-800ø 2.5 mm<2.1 kV DC800 nmTi:Sapphire femtosecond lasersPCB3D/25-C-800ø 2.5 mm<1.1 kV DC800 nmTi:Sapphire femtosecond lasers
BBO POCKELS CELLS
BBO Pockels cell are best suited for high repetition rate Q-switching, pulse picking at up to 3 MHz, laser cavity dumping, and pulses coupling into and from regenerative amplifier.
Features:
minimal piezoelectric ringing
low absorption
ceramic aperture is available
broad transmission range from 200 nm to 2000 nm
compact size
Applications:
high repetition rate DPSS Q-switch
high repetition rate regenerative amplifier control
cavity dumping
beam chopper
Pockels cell are used to change the polarization state of light passing through it when a voltage is applied to the electrodes of electro-optic crystals such as BBO. When used in conjunction with polarizer, Pockels cells can be used as fast optical switches. Typical applications include Q-switching of the laser cavity, laser cavity dumping and coupling light into and from regenerative amplifiers.
BBO based Pockels cells can be useful at wavelengths from the UV to more than 2 μm. Low piezoelectric ringing makes these Pockels cells attractive for the control of high-power and high pulse repetition rate lasers. Fast switching electronic drivers properly matched to the cell are available for Q-switching, cavity dumping and other applications. Pockels cells of PCB series are transverse field devices. Low electro-optical coefficient of BBO results in high operating voltages. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length. As a result, smaller aperture devices have lower quarter-wave, however even for 2.5 mm aperture devices the quarter-wave voltage is as high as 4 kV @ 1064 nm. Double crystal design is employed to reduce required voltages and to allow operation in half-wave mode with fast switching times.
Model
PCB3S
PCB3D
PCB3S/25
PCB3D/25
Clear aperture diameter, mm
2.5
Crystal size (WxHxL), mm
3x3x20
3x3x25
Quantity of crystals
1
2
λ/4 voltage (@ 1064 nm), kV DC
<3.5
<1.8
<3.0
<1.5
Capacitance, pF
4
6
Optical transmission, %
>98
Contrast ratio 1)
>1:1000
>1:500
Cell size, mm
Ø25.4x37.2
Ø25.4x57.2
Ø25.4x42.2
Ø25.4x67.2
All crystals for the Pockels cells provided above are coated AR/AR@1064 nm. Other antireflection coatings are available under request. Damage threshold >5 J/cm2 for 10 ns pulses at 1064 nm.
PCB4S
PCB4D
PCB4Q-C
3.5
4x4x20
<4.6
<2.3
< 2 x 1.3
3
2×<6
Ø25.4x112
PCB6.3S
PCB6.3D
PCB8D
5.8
7.5
6.3x6.3x20
8x8x20
<7.5
<3,8
<8
Ø35x42.2
Ø35x57.2
Ø35x64
BBO Pockels Cells for 1040 - 1070 nm range
CODE
CLEAR APERTURE
QUARTER WAVE VOLTAGE*
CENTRAL WAVELENGTH
APPLICATION
PCB3S-C-1064
ø 2.5 mm
<3.5 kV DC
1064 nm
Nd host high power lasers
PCB3D-C-1064
<1.8 kV DC
PCB3S/25-C-1064
<3.0 kV DC
PCB3D/25-C-1064
<1.5 kV DC
PCB4S-C-1064
ø 3.5 mm
<4.6 kV DC
PCB4D-C-1064
<2.3 kV DC
PCB4Q-C-1064
<2 x 1.3 kV DC
PCB6.3S-C-1064
ø 5.8 mm
<7.5 kV DC
PCB6.3D-C-1064
<3.8 kV DC
BBO Pockels Cells for 1020-1040 nm range
PCB3S-C-1030
<3.4 kV DC
1030 nm
Yb host femtosecond lasers
PCB3D-C-1030
<1.7 kV DC
PCB3S/25-C-1030
<2.9 kV DC
PCB3D/25-C-1030
<1.4 kV DC
PCB4S-C-1030
<4.5 kV DC
PCB4D-C-1030
<2.2 kV DC
PCB4Q-C-1030
<2 x 1.2 kV DC
PCB6.3S-C-1030
<7.4 kV DC
PCB6.3D-C-1030
<3.75 kV DC
BBO Pockels Cells for 770-820 nm range
PCB3S-C-800
<2.6 kV DC
800 nm
Ti:Sapphire femtosecond lasers
PCB3D-C-800
<1.3 kV DC
PCB4S-C-800
PCB4D-C-800
PCB4Q-C-800
<2 x 0.9 kV DC
PCB3S/25-C-800
<2.1 kV DC
PCB3D/25-C-800
<1.1 kV DC
商品属性 [波长] 1064nm,1030nm,800nm [通光孔径] 3.5mm [半波电压] < 2 x 1.3 kV DC