1310nm强度调制器
The Photline MX1300-LN series are lithium niobate (LiNbO3) intensity modulators specially designed for operation in the 1310 nm wavelength band. Thanks to their 1310 nm optimized optical waveguides and their 1310 nm selected fibers, the MX1300-LN can be claimed genuine 1310 nm intensity modulators.
The X-cut design of these Mach-Zehnder modulator confers them an unmatched stability in a wide range of operational conditions, as well as a zero chirp performance. iXBlue proprietary waveguide design offers a low insertion loss combined with a high contrast. Thanks to their low Vp, the MX1300 series are ideally suited for 10-12.5 Gb/s up to 50 Gb/s optical transmission with NRZ, RZ, DPSK, Duo Binary modulation formats and are key devices for a large variety of applications.
FEATURES
• 1310 nm specific waveguides
and fibers
• X-cut for high stability
• Low drive voltage
Low insertion loss
APPLICATIONS
• Up to 44 Gb/s digital
communications
• General purpose intensity
modulation
• Test and measurement
OPTIONS
• Analog version
• 1060 nm, 850 nm band versions
RELATED EQUIPMENTS
• Choice of RF drivers
• MBC-DG Automatic Bias
Controllers
• ModBox-1310nm-44Gb/s-NRZ
MX1300-LN-10 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1270
-
1330
nm
Insertion loss
-
3.5
-
dB
Electro-optical bandwidth
-
12
-
GHz
Vp RF @50 kHz
-
4
-
V
Specifications given at 25 °C, 50 Ω, 1310 nm.
MX1300-LN-20 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1270
-
1330
nm
Insertion loss
-
3.5
-
dB
Electro-optical bandwidth
-
25
-
GHz
Vp RF @50 kHz
-
4
-
V
Specifications given at 25 °C, 50 W, 1310 nm.
MX1300-LN-40 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1270
-
1330
nm
Insertion loss
-
3.5
-
dB
Electro-optical bandwidth
-
30
-
GHz
Vp RF @50 kHz
-
4
-
V
Specifications given at 25 °C, 50 W, 1310 nm.
MX1300-LN-10
12 GHz Intensity modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, -3dB from 2 GHz
10
12
-
GHz
Ripple S21
DS21p
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 10 GHz
-
-15
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
4
5
V
Vp RF @10 Gb/s PRBS
VpRF10 Gb/s
RF electrodes
-
4.7
5.7
V
Vp DC electrodes
VpDC
DC electrodes
-
5.5
6
V
RF input impedance
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
1
-
-
MW
50 W RF input
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1270
1310
1330
nm
Insertion loss
IL
Without connectors
-
3.5
4.5
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
22
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 1310 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MX1300-LN-20
25 GHz Intensity modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, -3dB from 2 GHz
20
25
-
GHz
Ripple S21
DS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 20 GHz
-
-15
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
4
5
V
Vp RF @20 Gb/s PRBS
VpRF20 Gb/s
RF electrodes
-
5.5
6
V
Vp DC electrodes
VpDC
DC electrodes
-
5.5
6
V
RF input impedance
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
1
-
-
MW
50 W RF input
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1270
1310
1330
nm
Insertion loss
IL
Without connectors
-
3.5
4.5
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
22
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 1310 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MX1300-LN-40
40 GHz Intensity modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, -3dB from 2 GHz
28
30
-
GHz
Ripple S21
DS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 30 GHz
-
-15
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
4
5
V
Vp DC electrodes
VpDC
DC electrodes
-
5.5
6
V
RF input impedance
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
1
-
-
MW
50 W RF input
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1270
1310
1330
nm
Insertion loss
IL
Without connectors
-
3.5
4.5
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
22
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 1310 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MX1300-LN-10 Typical S21 Curve MX1300-LN-10 Typical S11 Curve
MX1300-LN-20 Typical S21 Curve MX1300-LN-20 Typical S11 Curve
MX1300-LN-40 Typical S21 Curve MX1300-LN-40 Typical S11 Curve
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
Polarization maintaining 1310 nm
Corning PM13-U25D length : 1.5 meter, buffer diameter : 900 um
OUT
Optical output port
Polarization maintaining 1310 nm
Corning PM13-U25D length : 1.5 meter, buffer diameter : 900 um
RF
RF input port
MX-LN-10: Wiltron female K (SMA compatible)
MX-LN-20: Wiltron female K or V (optional)
MX-LN-40: Wiltron female V
1
Ground
Pin feed through diameter 1.0 mm
2
DC
Pin feed through diameter 1.0 mm
3, 4
Photodiode cathode, anode
Pin feed through diameter 1.0 mm
Ordering information
MX1300-LN-BW-XX-Y-Z-AB-CD
BW = Bandwidth : 10 10 GHz 20 20 GHz 40 40 GHz
XX = Internal photodiode : 00 Not integrated PD PD Integrated
Y = Input fiber : P Polarization maintaining S Standard single mode
Z = Output fiber : P Polarization maintaining S Standard single mode
AB = Input connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
Note : optical connectors are Seikoh-Giken with narrow key or equivalent
商品属性 [操作波长] 1270nm-1330nm [带宽] 12GHz [插入损耗] 3.5dB