1550nm模拟强度调制器
The Photline MXAN-LN series are high bandwidth intensity modulators specially designed for the transmission of analog signals over optical fibers.
The MXAN-LN’s performance parameters meet the requirement of the most demanding analog transmission links for military and civil applications: the x-cut design offers an unmatched stability, the low insertion loss optimizes links gain and the high linearity preserves the signal quality. They are specially suitable for microwave links and remoted antennas.
FEATURES
• High linearity
• Bandwidth 10 GHz, 20 GHz, 40 GHz
• High stability
• Low insertion loss
• Operation in C and L bands
APPLICATIONS
• RoF
• Antenna remoting
• Microwave and Radar links
• Space and defence systems
OPTIONS
• 1300 nm, 1000 nm,
800 nm versions
• Hermetic sealing
• Space qualified
RELATED EQUIPMENTS
• DR-AN RF amplifiers
• MBC ditherless Bias Controllers
• Turn-key ModBox systems
MXAN-LN-10 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1530
-
1625
nm
Insertion loss
-
2.7
3
dB
Electro-optical bandwidth
10
12
-
GHz
Vp RF @50 kHz
-
5.5
-
V
2nd harmonic suppression ratio
-
70
-
dB
Specifications given at 25 °C, 50 W, 1550 nm
MXAN-LN-20 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1530
-
1625
nm
Insertion loss
-
3.5
-
dB
Electro-optical bandwidth
20
25
-
GHz
Vp RF @50 kHz
-
5
-
V
2nd harmonic suppression ratio
-
60
-
dB
Specifications given at 25 °C, 50 W, 1550 nm
MXAN-LN-40 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1530
-
1625
nm
Insertion loss
-
3.5
-
dB
Electro-optical bandwidth
28
30
-
GHz
Vp RF @50 kHz
-
5
-
V
2nd harmonic suppression ratio
-
60
-
dB
MXAN-LN-10
10 GHz Analog Intensity Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
10
12
-
GHz
Ripple S21
DS21
RF electrodes, f < 10 GHz
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 10 GHz
-
-12
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
5.5
6
V
Vp RF @10 GHz
VpRF10 GHz
RF electrodes
-
6.5
7
V
Vp DC electrodes
VpDC
DC electrodes
-
6.5
7
V
2nd harmonic suppression ratio
H1 - H2
Measured @5 GHz
-
70
-
dB
Input 3rd order intercept
IIP3
Measured @5 GHz
28
30
-
dBm
RF input impedance
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
-
1
-
MW
50 W RF input
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1530
1550
1625
nm
Insertion loss
IL
Without connectors
-
2.7
3
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
22
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 1550 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MXAN-LN-20
20 GHz Analog Intensity Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
20
25
-
GHz
Ripple S21
DS21
RF electrodes, f < 20 GHz
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 20 GHz
-
-12
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
5
5.5
V
Vp RF @20 GHz
VpRF20 GHz
RF electrodes
-
7
8
V
Vp DC electrodes
VpDC
DC electrodes
-
6.5
7
V
2nd harmonic suppression ratio
H1 - H2
Measured @5 GHz, RFIN= 0 dBm
-
60
-
dB
Input 3rd order intercept
IIP3
Measured @5 GHz
28
30
-
dBm
RF input impedance
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
-
1
-
MW
50 W RF input
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1530
1550
1625
nm
Insertion loss
IL
Without connectors
-
3.5
4.5
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
25
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 1550 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MXAN-LN-40
40 GHz Analog Intensity Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
28
30
-
GHz
Ripple S21
DS21
RF electrodes, f < 30 GHz
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 30 GHz
-
-12
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
5
6
V
Vp RF @20 GHz
VpRF20 GHz
RF electrodes
-
7
8
V
Vp DC electrodes
VpDC
DC electrodes
-
6.5
7
V
2nd harmonic suppression ratio
H1 - H2
Measured @5 GHz, RFIN= 0 dBm
-
60
-
dB
Input 3rd order intercept
IIP3
Measured @5 GHz
28
30
-
dBm
RF input impedance
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
-
1
-
MW
50 W RF input
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1530
1550
1625
nm
Insertion loss
IL
Without connectors
-
3.5
4.5
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
25
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 1550 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MXAN-LN-10 Typical S21 Curve MXAN-LN-10 Typical S11 Curve
MXAN-LN-20 Typical S21 Curve MXAN-LN-20 Typical S11 Curve
MXAN-LN-40 Typical S21 Curve MXAN-LN-40 Typical S11 Curve
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
Polarization maintaining fiber, Corning PM 15-U25D,
Length 1.5 meter. Buffer diameter 900 mm
OUT
Optical output port
Polarization maintaining fiber, Corning PM 15-U25D,
Length 1.5 meter. Buffer diameter 900 mm
RF
RF input port
MX-LN-10: Wiltron female K (SMA compatible)
MX-LN-20: Wiltron female K or V (optional)
MX-LN-40: Wiltron female V
1
Ground
Pin feed through diameter 1.0 mm
2
DC
Pin feed through diameter 1.0 mm
3, 4
Photodiode cathode, anode
Pin feed through diameter 1.0 mm
Ordering information
MXAN-LN-BW-XX-Y-Z-AB-CD
BW = Bandwidth : 10 10 GHz 20 20 GHz 40 40 GHz
XX = Internal photodiode : 00 Not integrated PD PD Integrated
Y = Input fiber : P Polarization maintaining S Standard single mode
Z = Output fiber : P Polarization maintaining S Standard single mode
AB = Input connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
Note : optical connectors are Seikoh-Giken with narrow key or equivalent
商品属性 [操作波长] 1530nm-1625nm [带宽] 12GHz [插入损耗] 2.7dB