2µm强度调制器
The MX2000-LN series are intensity modulators especially designed for operation in the 2.0 μm wavelength band at frequencies up to 10 GHz and above.
These Mach-Zehnder modulators offer engineers working at 2.0 μm the intrinsic and unparalleled benefits of LiNbO3 external modulation: high bandwidth , high contrast, ease of use.
The MX2000-LN series are based on a X-cut design that confers them an unparalleled stability. They incorporate 2.0 μm specific waveguide and are pigtailed with 2.0 μmpolarization maintaining fibers.
FEATURES
• Low insertion loss
• Low Vp
• 2 µm specific design
APPLICATIONS
• LIDAR
• Gas sensing
• Mid-IR wavelength generation
• Spectroscopy
• Seed source
• Research & development
OPTIONS
• 20 GHz version
• Hermetic sealing
RELATED EQUIPMENTS
• Choice of RF drivers
• 2.0 µm band Phase Modulators
• MBC-DG Automatic Bias Controllers
MX2000-LN-01 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1900
-
2200
nm
Insertion loss
-
4
-
dB
Electro-optical bandwidth
1
2
-
GHz
Vp RF @50 kHz
-
5.5
-
V
Specifications given at 25 °C, 50 W, 2050 nm
MX2000-LN-10 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
1900
-
2200
nm
Insertion loss
-
4
-
dB
Electro-optical bandwidth
10
12
-
GHz
Vp RF @50 kHz
-
9.5
-
V
Specifications given at 25 °C, 50 W, 2050 nm
MX2000-LN-01
1 GHz Intensity Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 500 MHz
1
2
-
GHz
Ripple S21
DS21
RF electrodes, f < 2 GHz
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 2 GHz
-
-12
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
5.5
6.5
V
Vp DC electrodes
VpDC
DC electrodes
-
11.5
13
V
Impedance matching
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
-
1
-
MW
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1900
2050
2200
nm
Insertion loss
IL
Without connectors
-
4
5.5
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
22
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 2050 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MX2000-LN-10
10 GHz Intensity Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
10
12
-
GHz
Ripple S21
DS21
RF electrodes, f < 2 GHz
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, f < 10 GHz
-
-12
-10
dB
Vp RF @50 kHz
VpRF50 kHz
RF electrodes
-
9.5
11
V
Vp DC electrodes
VpDC
DC electrodes
-
11
13
V
Impedance matching
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
-
1
-
MW
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
l
-
1900
2050
2200
nm
Insertion loss
IL
Without connectors
-
4
5.5
dB
DC extinction ratio
ER
Measured with narrow source
linewidth < 200 MHz
20
22
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
a
-
-0.1
0
0.1
-
All specifications given at 25°C, 2050 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MX2000-LN-01 Typical S21 Curve MX2000-LN-01 Typical S11 Curve
MX2000-LN-10 Typical S21 Curve MX2000-LN-10 Typical S11 Curve
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
2000 nm Polarization maintaining fiber,
Nufern PM1950, length : 1.5 meter
OUT
Optical output port
2000 nm Polarization maintaining fiber,
Nufern PM1950, length : 1.5 meter
RF
RF input port
Wiltron female K (SMA compatible)
1
Ground
Pin feed through diameter 1.0 mm
2
DC
Pin feed through diameter 1.0 mm
3
Photodiode cathode
Pin feed through diameter 1.0 mm
4
Photodiode anode
Pin feed through diameter 1.0 mm
Ordering information
MX2000-LN-BW-Y-Z-AB-CD
BW = Bandwidth : 01 1 GHz 10 10 GHz
Y = Input fiber : P Polarization maintaining S Standard single mode
Z = Output fiber : P Polarization maintaining S Standard single mode
AB = Input connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
Note : optical connectors are Senko with narrow key or equivalent
商品属性 [操作波长] 1900nm-2200nm [带宽] 2GHz [插入损耗] 4dB