1000nm相位调制器
The Photline NIR-MPX series are phase modulators especially designed to operate in the 1000 nm wavelength band. They are available with various modulation bandwidths, from low frequency to 20 GHz and beyond.
Like all iXBlue Near InfraRed (NIR) modulators, the NIR-MPX series use a proton exchanged based waveguide process that confers them an unparalleled stability even when operating at high optical power. The NIR-MPX phase modulators come with high PER and low IL options.
NIR-MPX-LN-0.1 Performance Highlights.
FEATURES
• High optical power: 100 mW
• High Bandwidth version > 20 GHz
• High stability
• Low Vπ
• Low insertion loss
APPLICATIONS
• Interferometric based sensor
• Spectral broadening
• Frequency shifting
• Laser combining
• Pound-Drever-Hall locking (PDH)
OPTIONS
• 20 GHz version
• Hermetic sealing
• 800 nm, 950 nm versions
• High PER
• Lower Insertion Loss
RELATED EQUIPMENTS
• Matched RF amplifiers
• NIR-MX-LN intensity modulators
NIR-MPX-LN-0.1 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
980
-
1150
nm
Electro-optical bandwidth
-
150
-
MHz
Vπ RF @50 kHz
-
2
-
V
Insertion loss (option LIL)
-
-
3
dB
Specifications given at 25 °C, 1060 nm
NIR-MPX-LN-02 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
980
-
1150
nm
Electro-optical bandwidth
2
-
-
GHz
Vπ RF @50 kHz
-
3
-
V
Insertion loss (option LIL)
-
-
3
dB
Specifications given at 25 °C, 1060 nm
NIR-MPX-LN-05 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
980
-
1150
nm
Electro-optical bandwidth
5
-
-
GHz
Vπ RF @50 kHz
-
4
-
V
Insertion loss (option LIL)
-
-
3
dB
Specifications given at 25 °C, 1060 nm
NIR-MPX-LN-10 and NIR-MPX-LN-20 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
980
-
1150
nm
Electro-optical bandwidth
-
12 / 20
-
GHz
Vπ RF @50 kHz
-
5
-
V
Insertion loss (option LIL)
-
-
3
dB
Specifications given at 25 °C, 1060 nm
NIR-MPX-LN-0.1
150 MHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
-
150
-
MHz
Vπ RF @50 kHz
VπRF50 kHz
RF electrodes
-
2
2.5
V
RF input impedance
Zin-RF
-
-
10 000
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Waveguide process
-
-
Proton exchange
Operating wavelength
l
-
980
1060
1150
nm
Insertion loss
IL
Without connectors
-
3
4
dB
Low insertion loss option
LIL
Without connectors
-
-
3
dB
Polarization Extinction Ratio
PER
Standard, without connectors
20
-
-
dB
Optional, w/ or w/o connectors
25
30
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25°C, 1060 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
Modulation voltage range
EVin
-20
20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX-LN-02
2 GHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
-
2
-
-
GHz
Ripple S21
ΔS21
-
-
0.5
1
dB
Electrical return loss
S11
-
-
-12
-10
dB
Vπ RF @50 kHz
VπRF50 kHz
-
-
3
4
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Waveguide process
-
-
Proton exchange
Operating wavelength
l
-
980
1060
1150
nm
Insertion loss
IL
Without connectors
-
3
4
dB
Low insertion loss option
LIL
Without connectors
-
-
3
dB
Polarization Extinction Ratio
PER
Standard, without connectors
20
-
-
dB
Optional, w/ or w/o connectors
25
30
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25°C, 1060 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
33
dBm
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX-LN-05
5 GHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
-
5
-
-
GHz
Ripple S21
ΔS21
-
-
0.5
1
dB
Electrical return loss
S11
-
-
-12
-10
dB
Vπ RF @50 kHz
VπRF50 kHz
-
-
4
5
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Waveguide process
-
-
Proton exchange
Operating wavelength
l
-
980
1060
1150
nm
Insertion loss
IL
Without connectors
-
3
4
dB
Low insertion loss option
LIL
Without connectors
-
-
3
dB
Polarization Extinction Ratio
PER
Standard, without connectors
20
-
-
dB
Optional, w/ or w/o connectors
25
30
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25°C, 1060 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
33
dBm
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX-LN-10
10 GHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
-
10
12
-
GHz
Ripple S21
ΔS21
-
-
0.5
1
dB
Electrical return loss
S11
-
-
-12
-10
dB
Vπ RF @50 kHz
VπRF50 kHz
-
-
5
6
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Waveguide process
-
-
Proton exchange
Operating wavelength
l
-
980
1060
1150
nm
Insertion loss
IL
Without connectors
-
3
4
dB
Low insertion loss option
LIL
Without connectors
-
-
3
dB
Polarization Extinction Ratio
PER
Standard, without connectors
20
-
-
dB
Optional, w/ or w/o connectors
25
30
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25°C, 1060 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
33
dBm
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX-LN-20
20 GHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
-
16
20
-
GHz
Ripple S21
ΔS21
-
-
0.5
1
dB
Electrical return loss
S11
-
-
-12
-10
dB
Vπ RF @50 kHz
VπRF50 kHz
-
-
5.5
6.5
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Waveguide process
-
-
Proton exchange
Operating wavelength
l
-
980
1060
1150
nm
Insertion loss
IL
Without connectors
-
3
4
dB
Low insertion loss option
LIL
Without connectors
-
-
3
dB
Polarization Extinction Ratio
PER
Standard, without connectors
20
-
-
dB
Optional, w/ or w/o connectors
25
30
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25°C, 1060 nm, unless differently specified
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
Polarization maintaining fiber, Corning PM 98-U25A,
Length 1.5 meter. Buffer diameter 900 μm
OUT
Optical output port
Polarization maintaining fiber, Corning PM 98-U25A,
Length 1.5 meter. Buffer diameter 900 μm
RF
RF input port
Wiltron female K
Ordering information
NIR-MPX-LN-XX-Y-Z-AB-CD-LIL-PER
XX = Bandwidth : 0.1 150 MHz 02 2 GHz 05 5 GHz 10 10 GHz 20 20 GHz
Y = Input fiber : P Polarization maintaining S Standard single mode
Z = Output fiber : P Polarization maintaining S Standard single mode
AB = Input connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
LIL = Low Insertion Loss option
PER = High PER option
商品属性 [操作波长] 980nm-1150nm [带宽] 20GHz [插入损耗] 3dB