1550nm相位调制器
The Photline MPX-LN and MPZ-LN series make up the most comprehensive range of electro-optic phase modulators available on the market for the 1550 nm wavelength band.
• The MPZ-LN series are ideally suited for high bandwidth operation at 10 GHz, 20 GHz and up to 40 GHz.
• The MPX-LN-0.1 has a high impedance input optimized for modulation frequencies below 150 MHz.
Designed using state-of-the-art and proven lithium niobate technology, MPX-LN and MPZ-LN phase modulators are easy to operate and to integrate. They offer the highest performance for a wide range of applications from laboratory experiments to demanding industrial systems.
FEATURES
• High Bandwidth
• C & L bands
• Low insertion loss
• Low Vπ
APPLICATIONS
• Side bands generation
• Interferometric sensing
• Frequency shifting / broadening
• Quantum key distribution
• High data rate telecommunications
OPTIONS
• 1310 nm versions
• 800 nm, 1000 nm, 2.0 µm versions
• Low residual intensity modulation
RELATED EQUIPMENTS
• Matched RF amplifiers
MPX-LN-0.1 Performance Highlights
Parameter
MPX-LN-0.1
Operating wavelength
1530 nm -1625 nm
Electro-optical bandwidth
150 MHz
Vπ RF @50 kHz
3.5 V
Insertion loss
2.7 dB
Specifications given at 25 °C, 1550 nm.
MPZ-LN series Performance Highlights
Parameter
MPZ-LN-10
MPZ-LN-20
MPZ-LN-40
Operating wavelength
1530 nm - 1625 nm
Electro-optical bandwidth
12 GHz
25 GHz
33 GHz
Vπ RF @50 kHz
4 V
6 V
6 V
Insertion loss
2.5 dB
2.5 dB
2.5 dB
Specifications given at 25 °C, 1550 nm.
MPX-LN-0.1
150 MHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes
-
150
-
MHz
Vπ RF @50 kHz
Vπ RF50 kHz
RF electrodes
-
3.5
4
V
RF input impedance
Zin-RF
-
-
10 000
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Waveguide process
-
-
Ti diffusion
Operating wavelength
λ
-
1530
1550
1625
nm
Insertion loss
IL
Without connectors
-
2.7
3.5
dB
Polarization dependent loss
PDL
-
-
5
8
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 1550 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
Modulation voltage range
EVin
-20
20
V
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MPZ-LN-10
10 GHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
10
12
-
GHz
Ripple S21
ΔS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes
-
-17
-13
dB
Vπ RF @50 kHz
VπRF50 kHz
RF electrodes, @1550 nm
-
4
5
V
Vπ RF @10 GHz
VπRF10 GHz
RF electrodes, @1550 nm
-
6
7
V
Impedance matching
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate Z-Cut Y-Prop
Waveguide process
-
-
Ti diffusion
Operating wavelength
λ
-
1530
1550
1625
nm
Insertion loss
IL
Without connectors
-
2.5
3.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 1550 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MPZ-LN-20
20 GHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
20
25
-
GHz
Ripple S21
ΔS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes
-
-12
-10
dB
Vπ RF @50 kHz
Vπ RF50 kHz
RF electrodes, @1550 nm
-
6
7
V
Vπ RF @20 GHz
Vπ RF20 GHz
RF electrodes, @1550 nm
-
8
9
V
Impedance matching
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate Z-Cut Y-Prop
Waveguide process
-
-
Ti diffusion
Operating wavelength
λ
-
1530
1550
1625
nm
Insertion loss
IL
Without connectors
2
2.5
3
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 1550 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
MPZ-LN-40
40 GHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
30
33
-
GHz
Ripple S21
ΔS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, 0 - 30 GHz
-
-12
-10
dB
Vπ RF @50 kHz
Vπ RF50 kHz
RF electrodes, @1550 nm
-
6
7
V
Vπ RF @30 GHz
Vπ RF30 GHz
RF electrodes, @1550 nm
-
8.5
10
V
Impedance matching
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate Z-Cut Y-Prop
Waveguide process
-
-
Ti diffusion
Operating wavelength
λ
-
1530
1550
1625
nm
Insertion loss
IL
Without connectors
2
2.5
3
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 1550 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Optical input power
OPin
-
20
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
Polarization maintaining 1550 nm
Corning PM 15-U25D length : 1.5 meter, buffer diameter : 900 um
OUT
Optical output port
Polarization maintaining 1550 nm
Corning PM 15-U25D length : 1.5 meter, buffer diameter : 900 um
RF
RF input port
Wiltron female K (V type for MPZ-LN-40)
Ordering information
MPX-LN-0.1-Y-Z-AB-CD / MPZ-LN-WW-Y-Z-AB-CD
XX = X-cut Bandwidth : 0.1 150 MHz
WW = Z-cut Bandwidth : 10 10 GHz 20 20 GHz 40 40 GHz
Y = Input fiber : P Polarization maintaining S Standard single mode
Z = Output fiber : P Polarization maintaining S Standard single mode
AB = Input connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
Note : optical connectors are Senko with narrow key or equivalent
商品属性 [操作波长] 1530 nm -1625 nm [带宽] 33GHz [插入损耗] 2.5dB