Photoconductive Switches
Compact modules for pulsed terahertz generation
• Fiber-Coupled InGaAs Antennas
• SM/PM fiber pigtail and Silicon lens included
• High terahertz power: typ. > 30 µW
• High bandwidth > 5 THz
• Core components of TeraFlash platform
Pulsed terahertz generation with leading-edge technology: InGaAs antennas provide about 30 µW power and a bandwidth of more than 5 THz. The emitter and detector modules, developed by Fraunhofer Heinrich-Hertz Institute (Berlin/Germany), feature a strip-line and a dipole antenna, respectively, and are packaged with a Silicon lens and SM/PM fiber. They make up the core component of TOPTICA’s TeraFlash, but are available as individual modules too.
Applications
• Plastic Inspection
• Paint and coating layers
• Paper quality control
• Hydration monitoring
• Communication
• Ultrafast dynamics
• Gas sensing
• Fundamental physics
Specifications
Terahertz emitter
InGaAs/InP photoconductive switch with 100 µm strip-line antenna
#EK-000979: fiber length = 0.3 m
#EK-000781: fiber length = 1.0 m
#EK-000978: fiber length = 2.5 mTerahertz receiver
InGaAs/InP photoconductive switch with 25 µm dipole antenna, 10 µm gap
#EK-000981: fiber length = 0.3 m
#EK-000782: fiber length = 1.0 m
#EK-000980: fiber length = 2.5 mSemiconductor material
Multi-layer structure of InGaAs and InAIAs in InP
Wavelength
1560 nm
Emitter / receiver bandwidth
> 5 THz
Average terahertz power
Typ. 30 µW @ 20 mW laser power
Package
Cylindrical, Ø 25 mm
Integrated Si lens and SM/PM fiber pigtailRecommended operating conditions
Laser power 20 mW average
Max. bias +100 V (unipolar, emitter), ± 3 V (receiver, only for testing)