LLAM-1060-R8BH
Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM)
Excelitas’ LLAM-1550E InGaAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
Excelitas Technologies’ LLAM series of Silicon and InGaAs avalanche photodiodes (APD) receiver modules feature an APD, thermoelectric cooler (TEC) and a hybrid, all in the same hermetically-sealed modified 12-lead TO-66 flange package for increased heat sinking. The use of a TEC eases the burden on the APD bias control to insure constant responsivity over a 5⁰C to 40⁰C ambient temperature range.
The LLAM series modules are specifically designed for the detection of high-speed, low-light analog signals. The Si APDs used in these devices are the same as used in Excelitas’ C30902EH and C30954EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. Just like the C30659 series, the preamplifier section of the LLAM module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.
The LLAM is an inverting amplifier design with an emitter follower used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a 50 Ω termination. The module must not be DC-coupled to loads of less than 2 kΩ. For field use, it is recommended that a temperature-compensated HV supply be employed to maintain a constant responsivity over temperature.
Excelitas’ InGaAs LLAM-1060E and -1550E Preamplifier Modules, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities.
The LLAM series modules are offered as standard, RoHS-compliant, commercial off- the-shelf (COTS) products. Excelitas offers customized modules tailored for your specific needs; modifications include bandwidth and gain optimization, use of different APDs, FC-connectorized packaging.
Key Features
· System bandwidth of 50 MHz and 200MHz
· Ultra low noise equivalent power (NEP)
· Spectral response range:
· Si APD: 400 to 1100 nm
· InGaAs APD: 1100 to 1700 nm
· Typical power consumption: 150 mW (without TEC powered on)
· ±5 V amplifier operating voltages
· 50 Ω AC load capability (AC-Coupled)
· Hermetically-sealed TO-66 flange package for additional heat sinking
· High reliability
· Light entry angle, over 130°
· Model 1060E and 1550E exhibits enhanced damage threshold
· RoHS-compliant
· Available in both COTS and custom variations
Applications
· LIDAR
· Range finding
· Laser designation
· Confocal microscopy
· High-speed, extreme low-light detection
· Distributed temperature sensing (DTS)
· Analytical instrumentation
· High-speed, free-space optical communication
Table 1. Performance Specifications – LLAM 900/1060(E) Models (900 nm and YAG-enhanced Si APD)
Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled and TEC off
Detector Type
LLAM-900-R5BH
(C30902EH APD)
LLAM-1060-R8BH
LLAM-1060E-R8BH
(C30954EH APD)
Parameter
Min
Typical
Max
Min
Typical
Max
Units
Photosensitive Area
Active diameter
Active area
0.5
0.2
0.8
0.5
mm
mm²
Field of View
Nominal field of view α (see Figure 8)
Nominal field of view α’ (see Figure 8)
139
142
138
143
Degrees
System bandwidth, f-3dB
175
200
175
200
MHz
Temperature coefficient of Vop for constant gain
0.7
2.2
V/˚C
Vop for specified responsivity
180
Note 1
260
275
Note 1
435
V
Responsivity
at 830 nm
at 900 nm
at 1064 nm
Rf (Internal feedback resistor)
460
400
12
325
370
200
8.2
kV/W
kV/W
kV/W
kΩ
Noise equivalent power (NEP) (Note 2)
Average from 100 kHz to f-3dB, ∆f = 1.0 Hz
at 830 nm
at 900 nm
at 1064 nm
Output spectral noise voltage
Averaged from 100 kHz to f-3dB
35
40
15
55
65
25
30
25
50
10
90
80
150
30
fW/√Hz
fW/√Hz
fW/√Hz
nV/√Hz
Output impedance
33
40
50
33
40
50
Ω
Rise time, tr (l = 830, 900 and 1064 nm) 10% to 90% points
2
2
ns
Fall time, tf (l = 830, 900 and 1064 nm) 90% to 10% points
2
2
ns
Recovery time after overload (Note 3)
150
150
ns
Output voltage swing (1 kΩ load) (Note 4)
2
3
2
3
Vpp
Output voltage swing (50 Ω load) (Note 4)
0.7
0.9
0.7
0.9
Vpp
DC output offset voltage
-1
0.25
1
-1
0.25
1
VDC
APD temperature (case at room temperature)
-10
85
-10
85
⁰C
Thermistor value (Note 5)
5.1±5%
5.1±5%
kΩ
Positive supply current (V+)
20
35
20
35
mA
Negative supply current (V-)
10
20
10
20
mA
Notes:
1. A specific value of Vop within the specified range will be supplied with each device.
2. NEP is calculated as the output spectral noise voltage divided by the typical responsivity.
3. 0 dBm with 250ns pulses.
4. Pulsed operation, AC-coupled
5. The temperature of the thermistor in Kelvin can be calculated using the following equation: ,where R is the measured thermistor resistance in Ω,β=3200,R0=5100Ω,T0 = 298.15 K and r∞ = .
Table 2. Absolute – Maximum Ratings, Limiting Values
Detector type
LLAM-1060(E)-R8BH
(C30954EH)
LLAM-900-R5BH
(C30902EH)
LLAM-1550(E) Models
(C30645EH)
(C30662EH)
Parameter
Min
Max
Min
Max
Min
Max
Units
Photodiode HV bias voltage (Note 1)
at TA = +70˚C
at TA = -40˚C
600
300
350
210
100
50
V
V
Incident radiant flux, ΦM, (Note 2)
average (Note 3)
peak (Note 4)
peak (Note 5)
0.1
50
0.1
50
4 (for-1550)
1000 (for -1550E)
2
mW
mW
kW/cm²
Case temperature
storage, Tstg
operating, TA
Preamplifier bias voltage
-50
-40
±4.5
85
70
±5.5
-50
-40
±4.5
85
70
±5.5
-50
-40
±4.5
85
70
±5.5
˚C
˚C
V
Thermo-Electric Cooler (TEC)
Qmax, heat-pumping capacity
Vmax, rated at 27⁰C
Imax, rated at 27⁰C
0.9
0.8
1.8
0.9
0.8
1.8
0.9
0.8
1.8
W
V
A
Notes:
1. The operating voltage (Vop) must remain below the breakdown voltage (Vbr), these values are worst-case estimates. HV voltage current should be limited externally to less than 1mA.
2. As demonstrated in laboratory conditions.
3. Based on 0.5 W electrical power on the high voltage (HV) supply.
4. Test with 30 ns pulse width.
5. Tested at 1060 nm, 10 ns pulse width and 1 kHz pulse repetition rate.
Figure 1. Schematic Block Diagram – LLAM Series
Table 3. Ordering Guide
商品属性 [波长] 400 to 1100 nm / 1100 to 1700 nm [封装方式] TO-66