VTB Process Photodiodes
PRODUCT DESCRIPTION
Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
PACKAGE DIMENSIONS (inch)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB100H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H = 100 fc, 2850 K
50
65
µA
TC ISC
ISC Temperature Coefficient
2850 K
.12
.23
%/°C
VOC
Open Circuit Voltage
H = 100 fc, 2850 K
350
mV
TC VOC
VOC Temperature Coefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H = 0, VR = 10 V
225
500
pA
RSH
Shunt Resistance
H = 0, V = 10 mV
.15
GW
TC RSH
RSH Temperature Coefficient
H = 0, V = 10 mV
-8.0
%/°C
CJ
Junction Capacitance
H = 0, V = 0
0.097
2
nF
SR
Sensitivity
365 nm
.1
A/W
λrange
Spectral Application Range
320
1100
nm
λp
Spectral Response - Peak
920
nm
VBR
Breakdown Voltage
140
V
θ1/2
Angular Resp. - 50% Resp. Pt.
±70
Degrees
NEP
Noise Equivalent Power
1.8 x 10-13 (Typ.)
W /√ Hz
D*
Specific Detectivity
1.05 x 10 13 (Typ.)
cm √Hz / W
商品属性 [波长] 320-1100 nm