VTP Process Photodiodes VTP7840H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transfer molded,large lensed sidelooker package. The dark package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 85°C
Operating Temperature: -40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTP7840H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
50
70
µA
TC ISC
ISCTemperature Coefficient
2850 K
.20
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
325
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
ID
Dark Current
H= 0, VR = 10 V
20
nA
RSH
Shunt Resistance
H = 0, V = 10mV
0.25
GW
CJ
JunctionCapacitance
H= 0, V = 3V
40
pF
SR
Sensitivity
@Peak
.55
A/W
λrange
Spectral Application Range
725
1150
nm
λp
Spectral Response - Peak
925
nm
VBR
Forward Voltage
@10mA
1.0
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±48
Degrees
NEP
Noise Equivalent Power
5.3 x 10-14 (Typ.)
W /√ Hz
D*
Specific Detectivity
5.1 x 1012(Typ.)
cm √Hz / W
商品属性 [波长] 725-1150nm