SILICON PHOTODIODE VTD34SMH
FEATURES
· High sensitivity
· Low capacitance
· Fast response
· Low noise
· High shunt impedance
· Leads configured for surface mount applications
PRODUCT DESCRIPTION
This P on N photodiode is packaged in a transparent plastic package with the leads configured for surface mounting.
These devices are designed to provide excel- lent sensitivity at low levels of irradiance. Linearity is assured by the high shunt imped- ance and low series resistance. Due to their low junction capacitance, these devices exhibit fast response, even with relatively high load resistances.
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
SHORT CIRCUIT CURRENT @ 1000 lux, 2850 K
ISC
50
70
μA RISE / FALL TIME @ 1 kW LOAD, VR = 10 V, 833 nm
tR / tF
50
nsec DARK CURRENT @ VR = 10 V
ID
2
30
nA JUNCTION CAPACITANCE @ 1 MHz, VR = 3 V
CJ
25
40
pF ACCEPTANCE ANGLE (BETWEEN 50% RESPONSE)
θ1/2
±50
Degrees ACTIVE AREA
A
7.45
mm2
PACKAGE DIMENSIONS inch (mm)
GENERAL CHARACTERISTICS
PARAMETER
SYMBOL
TYPICAL RATING
UNITS
OPEN CIRCUIT VOLTAGE @ 1000 lux, 2850 K SOURCE
VOC
365
mV
BREAKDOWN VOLTAGE @ 25°C
VBR
50
V
PEAK SPECTRAL RESPONSE @ 25°C
λpk
900
nm
RADIOMETRIC SENSITIVITY @ PEAK, 25°C
SRPK
0.60
A / W
NOISE EQUIVALENT POWER
NEP
4.8 x 10-14
W / √Hz
SPECIFIC DETECTIVITY
D*
5.7 x 1012
cm √Hz / W
TEMPERATURE COEFFICIENT
SHORT CIRCUIT CURRENT @ 2850 K SOURCE
OPEN CIRCUIT VOLTAGE @ 2850 K SOURCE
DARK CURRENT
TCIL
TCOCV
TCID
+0.20
- 2.0
+15.0
% / °C
mV / °C
% / °C
TEMPERATURE RANGE OPERATING
STORAGE
TO
TS
- 20 to +80
- 20 to +80
°C
°C
商品属性 [波长] 400-1100nm