Silicon Wafer Thickness Sensor
SIT-200
All-optical, non-contact thickness sensor for silicon wafers
High dynamic range capable of measuring disordered surfaces
Capable of in-situ measurement during wet-etching
System Construction
Silicon Wafer Thickness Sensor is constructed with a precisely tuned wavelength-swept laser source, focusing sensor and optical receiver (PD). The wavelength-swept light is focused on the target, and the interference pattern formed by reflection from the target surface and back is detected by the PD after passing through the sensor.
Specifications
unit
Measurement target
Silicon waf er
Measurable thickness
10 ~ 500 (n=3.5)
μm
Light source
Wavelength swept laser source(1515 ~ 1585)
nm
Optical output power
0.6, Laser class 1
mW
Guiding light source
Red LD, Laser class 1M
Measurement time
Minimum 20
ms
Repeatability
Less than 0.1 (3σ)
μm
Monitor output
Interf erence signal (electrical)
PC interf ace
Ethernet
Power supply
AC 100-240 (50 / 60 Hz)
V
Dimension (W x H x D)
364 x 147 x 391
mm
Weight
9.0
kg
The above specifications may change without prior notice.
Applications
描述 [描述] 硅片厚度传感器由精确调谐的波长扫掠激光光源、聚焦传感器和光接收机(PD)构成。