NIR-MX950-LN series
950 nm band 20 GHz Intensity Modulators
The NIR-MX950-LN series are 10 GHz and 20 GHz intensity modulators especially designed for operation in the 950 nm wavelength band.
NIR-MX950 Mach-Zehnder modulators offer engineers working in the 950 nm band the intrinsec and unparalleled benefits of LiNbO3 modulation: high band- width, high contrast and ease of use.
NIR-MX950 series Intensity Modulators use proton exchange waveguide process on a doped LiNbO3 substrat. This unique combination confers them an unparalleled stability and a superior optical power handling.
FEATURES
• High Bandwidth
• X-cut for high stability
• High optical power handling
• Low drive voltage
• Low insertion loss
APPLICATIONS
• Quantum optics
• Pulse generation / picking
OPTIONS
• 800 nm band modulators versions
RELATED EQUIPMENTS
• RF amplifiers
• MBC Automatic Bias Controllers
• NIR-MPX950 Phase Modulators
NIR-MX950-LN-20 Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
850
900
960
nm
Insertion loss
-
5.5
-
dB
Optical input power
-
-
14
dBm
Electro-optical bandwidth
-
25
-
GHz
Vp RF @50 kHz
-
3.5
-
V
Electrical return loss
-
12
-
dB
Specifications given at 25 °C, 950 nm
NIR-MX950-LN-20
20 GHz Intensity Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth @-3 dB
S21
RF electrodes, from 2 GHz
20
25
-
GHz
Ripple S21
ΔS21
RF electrodes, f < 20 GHz
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, , f < 20 GHz
-
-13
-10
dB
Vπ RF @50 kHz
VπRF50 kHz
RF electrodes
-
3.5
4.5
V
Vπ DC electrodes
VπDC
DC electrodes
-
3.9
4.5
V
impedance matching
Zin-RF
-
-
50
-
W
DC input impedance
Zin-DC
-
-
1
-
MW
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop
Operating wavelength
λ
-
850
900
960
nm
Insertion loss
IL
Without connectors
-
5.5
-
dB
DC extinction ratio
ER
Measured with narrow source linewidth < 200 MHz
20
25
-
dB
Optical return loss
ORL
-
-40
-45
-
dB
Chirp
α
-
-0.1
0
0.1
-
All specifications given at 25 °C, 944 nm.
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
RF input power (CW mode)
EPin
-
+28
dBm
Bias voltage
Vbias
-20
+20
V
Optical input power (CW mode)
OPin
-
14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
Polarization maintaining fiber, Corning PM 85-U25D, Length 1.5 meter. Buffer diameter 900 mm
OUT
Optical output port
Polarization maintaining fiber, Corning PM 85-U25D, Length 1.5 meter. Buffer diameter 900 mm
RF
RF input port
Wiltron female K
1
Ground
Pin feed through diameter 1.0 mm
2
DC
Pin feed through diameter 1.0 mm
3 , 4
Not connected
Pin feed through diameter 1.0 mm
Ordering information
NIR-MX950-LN-BW-00-Y-Z-AB-CD
BW = Bandwidth : 20 20 GHz 00 = No monitoring PD
Y = Input fiber : P Polarization maintaining
Z = Output fiber : P Polarization maintaining
AB = Input connector : 00 bare fiber FA FC/APC FC FC/SPC (slow axis parallel to connector key) CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC (slow axis parallel to connector key) Note : optical connectors are Senko with narrow key or equivalent
商品属性 [操作波长] 950 nm [带宽] 20 GHz [插入损耗] 5.5dB