NIR-MPX950 series 950 nm band Phase Modulators
The NIR-MPX950 series are phase modulators especially designed to operate in the 900 nm wavelength band. They are available with various modulation bandwidth, from low frequency to 20 GHz and beyond.
Like all iXblue Near InfraRed (NIR) modulators, the NIR-MPX950 series use a proton exchanged based waveguide process that confers them an unparalleled stability and a high photo-refractive threshold.
FEATURES
• High optical power handling
• Wide bandwidth
• High stability
• Low Vπ
• Low insertion loss
APPLICATIONS
• Interferometric based sensors
• Quantum optics
• Frequency shifting
• Pound-Drever-Hall locking (PDH)
OPTIONS
• Hermetic sealing
• 850 nm and 1060 nm versions
RELATED EQUIPMENTS
• RF amplifiers
• NIR-MX950 intensity modulators
NIR-MPX950-LN-0.1 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
850
900
950
nm
Electro-optical bandwidth
100
150
-
MHz
Vp RF @50 kHz
-
2.2
-
V
Insertion loss
-
3.5
-
dB
Specifications given at 25 °C, 950 nm.
NIR-MPX950-LN-05 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
850
900
950
nm
Electro-optical bandwidth
5
-
-
GHz
Vp RF @50 kHz
-
3.5
-
V
Insertion loss
-
3.5
-
dB
Specifications given at 25 °C, 950 nm.
NIR-MPX950-LN-10 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
850
900
950
nm
Electro-optical bandwidth
10
12
-
GHz
Vp RF @50 kHz
-
4.5
-
V
Insertion loss
-
3.5
-
dB
Specifications given at 25 °C, 950 nm.
NIR-MPX950-LN-20 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
850
900
950
nm
Electro-optical bandwidth
16
20
-
GHz
Vp RF @50 kHz
-
4.5
-
V
Insertion loss
-
3.5
-
dB
Specifications given at 25 °C, 950 nm.
NIR-MPX950-LN-0.1
150 MHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth @-3 dB
S21
-
100
150
-
MHz
Vπ RF @50 kHz
Vπ RF50 kHz
-
-
2.2
3.2
V
RF input impedance
Zin-RF
-
-
10 000
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
850
900
950
nm
Insertion loss
IL
Without optical connectors
-
3.5
5.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 944 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
Modulation voltage range
EVin
-20
20
V
Optical input power (CW mode)
OPin
-
+14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX950-LN-05
5 GHz Phase modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
5
-
-
GHz
Ripple S21
ΔS21
-
-
0.5
1
dB
Electrical return loss
S11
-
-
-12
-10
dB
Vπ RF @50 kHz
VπRF50 kHz
-
-
3.5
4.5
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
850
900
950
nm
Insertion loss
IL
Without optical connectors
-
3.5
5.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 944 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power (CW mode)
EPin
-
+28
dBm
Optical input power (CW mode)
OPin
-
+14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX950-LN-10
10 GHz Phase modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
10
12
-
GHz
Ripple S21
ΔS21
-
-
0.5
1
dB
Electrical return loss
S11
-
-
-12
-10
dB
Vπ RF @50 kHz
Vπ RF50 kHz
-
-
4.5
5.5
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
850
900
950
nm
Insertion loss
IL
Without connectors
-
3.5
5.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 944 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power (CW mode)
EPin
-
+28
dBm
Optical input power (CW mode)
OPin
-
+14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX950-LN-20
20 GHz Phase modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
16
20
-
GHz
Ripple S21
ΔS21
-
-
0.5
1
dB
Electrical return loss
S11
-
-
-12
-10
dB
Vπ RF @50 kHz
Vπ RF50 kHz
-
-
4.5
5.5
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
850
900
950
nm
Insertion loss
IL
Without connectors
-
3.5
5.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 944 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power (CW mode)
EPin
-
+28
dBm
Optical input power (CW mode)
OPin
-
+14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
Polarization maintaining 800 nm Corning 85-U25D length : 1.5 meter, buffer diameter : 900 um
OUT
Optical output port
Polarization maintaining 800nm Corning 85-U25D length : 1.5 meter, buffer diameter : 900 um
RF
RF input port
Wiltron female K
Ordering information
NIR-MPX950-LN-XX-00-P-P-AB-CD
XX = Bandwidth : 0.1 150 MHz 05 5 GHz 10 10 GHz 20 20 GHz
P = Input fiber : P Polarisation maintaining
P = Input fiber : P Polarisation maintaining
AB = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
商品属性 [操作波长] 850 nm至950 nm [带宽] 高达5 GHz