Ultra-Low-Noise Current Amplifier
Features
Bandwidth and Frequency Response Independent of
Detector-Capacitance (up to 10 nF)
Extremely Low Noise, 19 fA/√Hz Equivalent Input Noise Current
Bandwidth DC ... 40 kHz
Transimpedance (Gain) 1 x 108
V/A
Applications
Photodiode- and Photomultiplier-Amplifier
Spectroscopy
Charge-Amplifier
Ionisation Detectors
Preamplifier for Lock-Ins, A/D-Converters, etc.
Specifications
Test Conditions
Vs = ± 15 V, Ta = 25°C
Gain
Transimpedance
1 x 108 V/A (>10 kΩ Load)
Accuracy
± 1%
Frequency Response
Lower Cut-Off Frequency
DC
Upper Cut-Off Frequency
40 kHz (- 3 dB)
Rise- / Fall-Time
10 µs (10% - 90%)
Gain Flatness
± 0.1 dB
Input
Equ. Input Noise Current
19 fA/√Hz (@ 10 kHz)
Equ. Input Noise Voltage
5 nV/√Hz (@ 10 kHz)
Input Bias Current
2 pA typ.
Input Bias Current Drift Factor
1.7 / 10 K
Offset Current Compensation
± 30 nA, Adjustable by Offset-Trimpot
Max. Input Current
± 100 nA (Linear Amplification)
Input Offset Voltage
< 1 mV
DC Input Impedance
50 Ω (Virtual) // 5 pF
Output
Output Voltage
± 10 V (>10 kΩ Load)
Output Impedance
50 Ω (Terminate with >10 kΩ for best Performance)
Max. Output Current
± 10 mA (Linear Amplification)
Power Supply
Supply Voltage
± 15 V
Supply Current
± 40 mA typ.
Case
Weight
210 gr. (0.5 lbs)
Material
AlMg4.5Mn, nickel-plated
Temperature Range
Storage Temperature
-40 ... +100 °C
Operating Temperature
0 ... +60 °C
Absolute Maximum Ratings
Input Voltage
± 5 V
Power Supply Voltage
± 22 V
Connectors
Input
BNC
Output
BNC
Power Supply
LEMO Series 1S, 3-pin Fixed Socket
Application Diagrams
Photo Detector Biasing in Photovoltaic Mode: Use for Low Speed Applications and Minimum Dark Current.
Photo Detector Biasing in Photoconductive Mode: Use for Fast Applications and if More Dark Current is Tolerable. Bias Voltage Decreases Detector Capacitance.
Dimensions
商品属性 [频率] 40kHz [互导倒数] 1 x 108 V/A [上升时间] 10us