2.2 GHz High-Speed Amplifier
Features
Bandwidth 10 kHz … 2.2 GHz
Rise time 160 ps
Gain 40 dB (inverting)
Input VSWR 1.25 : 1
Integrated bias circuit
Applications
Preamplifier for ultra-fast detectors (microchannel-plates, photomultipliers, avalanche-photodiodes and PIN-photodiodes)
Oscilloscope and transient-recorder preamplifier
Time-resolved pulse and transient measurements
Block Diagram
Specifications
Test conditions
VS = +15 V, TA = 25°C, system impedance = 50 Ω
Gain
Gain
40 dB (x 100) (inverting)
Transimpedance gain
5,000 V/A (40 dB x 50 Ω)
Gain accuracy
±1 dB
Frequency Response
Lower cut-off frequency (–3 dB)
10 kHz (±20 %)
Upper cut-off frequency (–3 dB)
2.2 GHz (±15 %)
Rise/fall time (10 % - 90 %)
160 ps
Input
DC input impedance
50 Ω
RF input impedance
50 Ω
50 Ω noise figure
2.8 dB (@ f < 1 GHz)
Equivalent input voltage noise
430 pV/√Hz
Input VSWR
1.25 : 1 (@ f < 2.2 GHz)
Input return loss
19 dB (@ f < 2.2 GHz)
Output
Output impedance
50 Ω
Output VSWR
1.4 : 1 (@ f < 2.5 GHz)
Output return loss
15.5 dB (@ f < 2.5 GHz)
Output power
P1dB +12.5 dBm (@ f < 1 GHz)
Output peak-to-peak voltage
2.0 VPP (@ f < 500 MHz, for linear amplification)
Output noise
typ. 3.0 mVRMS or 20 mVPP* (measurement BW: 4 GHz)
* The peak-to-peak output noise is derived from the RMS noise as follows: VPP = VRMS x 6.6 (99.9% of the time the output noise voltage will be within the specified peak-to-peak value.)
Power Supply
Supply voltage
+15 V
Supply current
+145 mA
Case Weight
100 g (0.23 lb)
Material
AlMg4.5Mn, nickel-plated
Temperature Range
Storage temperature
–40 ... +100 °C
Operating ambient temperature
0 ... +60 °C
Absolute Maximum Ratings
Power supply voltage
+18.5 V
DC and LF input voltage
±3 V
RF input power
+13 dBm
Connectors
Input
SMA, jack (female)
Output
SMA, jack (female)
Power supply
Lemo® series 1S, 3-pin fixed socket (mating plug type: FFA.1S.303.CLAC52)
Pin 1: +15 V
Pin 2: NC
Pin 3: GND
Dimensions
商品属性 [频率] 10 kHz … 2.2 GHz [上升时间] 160 ps