Femtowatt Photoreceiver with InGaAs PIN Photodiode
Features
InGaAs PIN photodiode, 0.5 mm active diameter
Ultra low noise, NEP 7.5 fW/√Hz
Amplifier transimpedance gain 1 x 1011 V/A
Max. conversion gain 0.95 x 1011 V/W @ 1550 nm
Wavelength range 900 … 1700 nm
Applications
Fluorescence measurements
NIR spectroscopy
Electrophoresis
Replacement for (liquid nitrogen) cooled Ge photodiodes and avalanche photodiodes (APDs)
Spectral Response
Specifications
Test conditions
VS = ±15 V, TA= 25°C
Warm-up
20 minutes (min. 10 minutes recommended)
Gain Amplifier transimpedance
1.0 x 1011 V/A (@ ≥ 100 kΩ load)
Max. conversion gain
0.95 x 1011 V/W (@ 1550 nm)
Frequency Response
Lower cut-off frequency
DC
Upper cut-off frequency (–3 dB)
20 Hz (±20 %)
Rise/fall time (10 % - 90 %)
18 ms (±20 %)
Detector
Detector material
InGaAs PIN photodiode
Active area
∅ 0.5 mm
Spectral response
900 … 1700 nm
Input
Optical saturation power
110 pW (for linear amplification, @ 1550 nm)
NEP
7.5 fW/√Hz (@ 1550 nm, 1 Hz)
Output
Output voltage range
±10 V (@ ≥ 100 kΩ load)
Output impedance
50 Ω (designed for ≥ 100 kΩ load)
Offset voltage
0 V, adjustable by offset potentiometer within ±1.6 V
Max. output current
±25 mA
Output noise
ca. 20 mVPP or 3 mVRMS (@ ≥ 100 kΩ load, no signal on detector)
Power Supply
Supply voltage
±15 V
Supply current
±15 mA typ. (depends on operating conditions, recommended power supply capability min. ±50 mA)
Case Weight
190 g (0.42 lbs)
Material
AlMg3/4.5Mn, nickel-plated
Temperature Range
Storage temperature
–40 … +100 °C
Operating temperature
0 … +60 °C
Absolute Maximum Ratings
Optical input power
10 mW
Power supply voltage
±22 V
Connectors Input
25 mm round flange for free space applications (fiber optic input available as customized unit)
Output
BNC jack (female)
Power supply
Lemo® series 1S, 3-pin fixed socket (Mating plug type: FFA.1S.303.CLAC52)
Pin 1: +15V
Pin 2: –15V
Pin 3: GND
Available Models
FWPR-20-IN-FS
Free space input
FWPR-S
Customized version available on request
Dimensions
商品属性 [活跃直径] 0.5 mm [光谱范围] 900 … 1700 nm [NEP] 7.5 fW/√Hz [变频增益 ] 0.95 x 1011 V/W @ 1550 nm