Gain chip for 780-820nm tuning range, 130mW @ 800nm, QGC-800-40-130
Designed for external cavity tunable laser
Optimized for wavelength locked operation
High Signal / ASE ratio
Gain chip has curved stripe with HR-coating on the back facet and deep AR-coating on the tilted front side. The curved stripe along with deep AR-coating provide extremely low reflection (< 10E-5) resulting in suppression of self lasing and minimizing of gain ripples.
Specifications
RECOMMENDED OPERATING POINT
Parameter
Min
Typ
Max
Unit
Current
250
300*
mA
Forward voltage
1.8
2.0
V
Heatsink temperature
20
25
30
deg. C
*No self-lasing up to maximum current
TUNABILITY (@ CW, recommended operating point, external cavity in Littman configuration, ≈10% feedback)
Parameters
Min
Typ
Max
Unit
Wavelength of maximum power (λMP)
790
800
810
Optical output power @ λMP
100
130
mW
Central wavelength of tuning range
790
800
810
nm
Tuning range width
40
nm
AMPLIFIED SPONTANEOUS EMISSION (@ CW, recommended operating point, without external cavity)
Parameter
Min
Typ
Max
Unit
Optical power
20
mW
Mean wavelength
795
nm
Bandwidth @ -3dB*
20
nm
Fast axis beam divergence @ -3dB
28
32
35
deg.
Slow axis beam divergence @ -3dB
4
5
12
deg.
* Radiation coupled in single-mode fiber without lens and measured by OSA with 1 nm resolution.
CHIP PARAMETERS
Parameter
Min
Typ
Max
Unit
Chip length
2
mm
Back-reflection from back facet (HR-coated)
99
%
Back-reflection from front facet (AR-coated)
0.001
%
ABSOLUTE MAXIMUM RATINGS
Parameters
Min
Max
Unit
Diode reverse voltage
1
V
Forward current
300
mA
Storage temperature (in original hermetically sealed package)
5
50
°C
Heatsink operating temperature
20
40
°C
CHIP VISUAL ACCEPTANCE CRITERIA
Top view: no indentations deeper 30um on cleaved edges, no scratches or indentations on mesa
Front facet view: no particles or defects of coating in 10-um area around mesa
Spectrum
TYPICAL PERFORMANCE WITHOUT FEEDBACK
@ CW, 25°C heatsink temperature
TYPICAL PERFORMANCE IN EXTERNAL CAVITY (EC)
@ CW, 25°C heatsink temperature, Littman configuration with ≈10% feedback
Pin Configuration
Unit in mm
Additional information
The laser light emitted from this device is invisible and can be dangerous to the human eye. Avoid looking directly into the fiber output or into the collimated beam along its optical axis when the device is in operation. Proper laser safety eyewear must be worn during operation.
Absolute Maximum Ratings may be applied to the device for short period of time only. Exposure to maximum ratings for extended period of time or exposure above one or more max ratings may cause damage or affect the reliability of the device. Operating the product outside of its maximum ratings may cause device failure or a safety hazard.
Power supplies used with the device must be employed such that the maximum peak optical power cannot be exceeded. A proper heatsink for the device on thermal radiator is required, sufficient heat dissipation and thermal conductance to the heatsink must be ensured. The device is an open-heatsink laser diode; it may be operated in cleanroom atmosphere or dust-protected housing only. Operating temperature and relative humidity must be controlled to avoid water condensation on the laser facets. Any contamination or contact of the laser facet must be avoided.
ESD PROTECTION – Electrostatic discharge is the primary cause of unexpected product failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling the product.
商品属性 [波长] 780-820 [功率] 130mW [激光器类型] Gain Chip [封装方式] 9mm TO [光谱宽度] 20nm