SINGLE FREQUENCY LASER DIODES
Distributed Feedback Laser
General Product Information
Product
922 nm DFB Laser
with hermetic 8-Pin TO Package (RoHS compliant)
including Monitor Diode, Thermoelectric Cooler and Thermistor
Application
Sr Spectroscopy
Absolute Maximum Ratings
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Storage Temperature
TS
°C
-40
85
Stress in excess of one of the Absolute Maximum
Ratings may damage the laser. Please note that a
damaging optical power level may occur although
the maximum current is not reached. These are
stress ratings only, and functional operation at
these or any other conditions beyond those
indicated under Recommended Operational
Conditions is not implied.
Operational Temperature at Case
TC
°C
-20
60
Operational Temperature at Laser Chip
TLD
°C
0
50
Forward Current
IF
mA
160
Reverse Voltage
VR
V
2
Output Power
Popt
mW
100
TEC Current
ITEC
A
1.8
TEC Voltage
VTEC
V
3.2
Recommended Operational Conditions
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Operational Temperature at Case
Tcase
°C
-20
55
Operational Temperature at Laser Chip
TLD
°C
5
40
measured by integrated Thermistor
Forward Current
IF
mA
150
Output Power
Popt
mW
20
80
Characteristics at TLD = 25° at BOL
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Center Wavelength
λC
nm
921
922
923
see images
Target Wavelength
λT
nm
921.7
reached within TLD =0 ° ... 40° C at 80 mW
Linewidth (FWHM)
△λ
MHz
1
2
Popt = 80 mW
Sidemode Supression Ratio
SMSR
dBmW
30
45
Popt = 80
Temperature Coefficient of Wavelength
dλ/ dT
nm / K
0.06
Current Coefficient of Wavelength
dλ / dI
nm / mA
0.003
Mode-hop free Tuning Range
△λtune
pm
30
> 10 GHz, at target wavelength
Characteristics at TLD = 25° at BOL cont'd
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Laser Current @ Popt = 80 mW
ILD
mA
150
Slope Efficiency
η
W / A
0.5
0.8
1.1
Threshold Current
Ith
mA
70
Divergence parallel (FWHM)
Θ∥
°
8
parallel to short axis of the housing
Divergence perpendicular (FWHM)
Θ⊥
°
21
parallel to long axis of the housing
Degree of Polarization
DOP
%
95
Popt = 80 mW; E field parallel to short axis of housing
Monitor Diode
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Monitor Detector Responsivity
Imon / Popt
μA/mW
t.b.d.
t.b.d.
UR = 5 V
Thermoelectric Cooler
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Current
ITEC
A
0.4
Popt = 80 mW, ΔT = 20 K
Voltage
UTEC
V
0.8
Popt = 80 mW, ΔT = 20 K
Power Dissipation (total loss at case)
Ploss
W
0.5
Popt = 80 mW, ΔT = 20 K
Temperature Difference
△T
K
50
Popt = 80 mW, ΔT = |Tcase - TLD|
Thermistor (Standard NTC Type)
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Resistance
R
kΩ
10
TLD = 25° C
Beta Coefficient
β
3892
R1 / R2 = e b (1/T1 - 1/T2) at TLD = 0° … 50° C
Steinhart & Hart Coefficient A
A
1.1293 x 10-3
1/T = A + B(ln R) + C(ln R)3
Steinhart & Hart Coefficient B
B
2.3410 x 10-4
T: temperature in Kelvin
Steinhart & Hart Coefficient C
C
8.7755 x 10-8
R: resistance at T in Ohm
Pin Assignment
1 Thermoelectric Cooler (+)
5 Laser Diode Anode
2 Thermistor
6 Monitor Diode Anode
3 Thermistor
7 Photo Diode Cathode
4 Laser Diode Cathode
8 Thermoelectric Cooler (-)
All 8 pins are isolated from case.
Package Drawings
Typical Measurement Results
Performance figures, data and any illustrative material provided in this specification are typical and must be specifically confirmed in writing by eagleyard Photonics before they become applicable to any particular order or contract. In accordance with the eagleyard Photonics policy of continuous improvement specifications may change without notice.
商品属性 [波长] 922nm [功率] 80mW