Photodiode C30817EH series
Silicon Avalanche Photodiode for General-Purpose Applications
Key Features
High Quantum Efficiency 85% typical at 900nm 18% typical at 1060 nm
Spectral Response range – 400 to 1100nm
Fast Time Response Rise time and Fall time typically 2ns
Wide Operating Temperature RangeApplications
Laser detection
Ranging
Optical communications
High-speed switching
Transit-time measurements
The C30817EH is a general-purpose silicon avalanche photodiode made using a double-diffused “reach through” structure. This structure provides high responsivity between 400 to 1100 nanometers as well as fast rise and fall times at all wavelengths. Because the fall time characteristics had no “tail”, the responsivity of the device is independent of modulation frequency up to about 200 MHz. The C30817 is hermetically sealed behind a flat glass window in a modified low-profile TO-5 package. The device is useful in a wide variety of applications including laser detection, ranging, optical communications, high-speed switch, and transit-time measurements.
Table 1 – Mechanical and Optical Characteristics
Parameter
Symbol
Units
Remarks / Conditions
Package
TO-5
Photosensitive Surface:
Useful area
Useful diameter
A
d
0.5
0.8
mm²
mm
Shape : Circular
Field of View:
Nominal field of view α (see Figure 9) Nominal field of view α’ (see Figure 9)
FoV
119
132
Degrees
Table 2 – Electro-Optical Characteristics
Test conditions: Case temperature = 22˚C, ; at the DC reverse operating voltage V, Vop supplied with device
Parameter
Symbol Minimum Typical Maximum
Units Breakage Voltage
Vbr 300 375 475 V Operating Voltage
Vop
275
425
Temperature Coefficient of Vop for Constant Gain
2.2
V/°C
Gain
M
120
Responsivity
at 900 nm
at 1060 nm
R
65
15
75
18
A/W
Quantum Efficiency:
at 900 nm
at 1060 nm
Q.E.
85
18
%
Total Dark Current
Id
50
200
nA
Noise Current
f = 10 kHz
∆f = 1 Hz; See Figure 5
in
1.0
2.0
pA/√Hz
Capacitance
Cd
2
4
pF
Series Resistance
Rs
15
Ω
Rise/Fall Time, RL = 50Ω, λ = 900 nm:
10% to 90% points
90% to 10% points
tr
tf
2
3
ns
Table 3 – Absolute – Maximum Ratings, Limiting Values
Parameter
Symbol
Min.
Typ.
Max.
Units
Remarks / Conditions
Reverse Bias Dark Current
100
max. µA
Photocurrent Density:
average value peak value
Jp
5
20
mA/mm2
At 22 °C ; Continuous operation
Forward Current:
average value
peak value
IF
5
50
max. mA
For 1 second duration, non- repetitive
Maximum Total Power
0.1
W
Dissipation at 22 °C
Operating Temperature
To
-40
70
°C
Storage Temperature
Tstg -60 100
°C
Soldering
200 °C
5 seconds, leads only
Mechanical Characteristic – C30817EH – reference dimensions shown in mm (inches)
商品属性 [波长] 400 to 1100nm