C30927EH-01, -02 and -03
Quadrant Silicon Avalanche Photodiode for Tracking Applications
Key Features
Full Angle for Totally illuminated Photosensitive Surface greater than 90 degrees
High Quantum Efficiency -
C30927EH-03 85% typically at 800 nm
C30927EH-02 85% typically at 900 nm
C30927EH-01 18% typically at 1060nm
Fast Time Response -
Rise Time typically 3 ns
Fall Time Typically 3 ns
Large Area : 1.77mm2
Hermetically Sealed Low Profile TO-8 Packages
Applications
Tracking
Alignment
“Friend or Foe” identification
The C30927EH-01, C30927EH-02 and C30927EH-03 types are quadrant silicon photodiodes made using a double diffused “reach-through” structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.
They are optimized for use at wavelengths of 1060, 900 and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength.
The quadrant avalanche photodiodes are useful in a variety of tracking and alignment applications.
Table 1 ̶ Mechanical and Optical Characteristics
Parameter
Symbol
Unit
Shape
Circular
Configuration
Quadrant
Photosensitive Surface: Useful area Useful diameter
A
d
1.77
1.55
mm2 mm
Table 2 ̶ Electro-Optical Characteristics
Case Temperature TA = 22 °C; at the DC reverse operating voltage, Vop, and light spot diameter of 1.0 mm (0.04 inches) centered at boresight,
unless otherwise specified1 .
Parameter
Symbol
Minimum
Typical
Maximum
Units
Breakdown Voltage
Vbr
350
425
485
V
Temperature Coefficient of Vop for Constant M
Vop
2.4
V/°C
Gain
M
100
Responsivity
at 800 nm
at 900 nm
at 1060 nm
R
45
50
12
55
62
15
A/W
Quantum Efficiency
at 800 nm
at 900 nm
at 1060 nm
Q.E.
85
85
18
%
Total Dark Current
Id
100
200
nA
Noise Current
(f=10kHz, Δf=1.0Hz, See Figure 5)
in
1.0
1.5
pA/√Hz
Capacitance
total all quadrants
between quadrants
Cd
3
5
0.5
pF
Resistance Between Paralleled Quadrant Pairs (See Figure 6)
8
50
kΩ
Crossover at Boresight
(25µm spot, 10% to 90%, See Figure 8)
75
µm
Series Resistance
Rs
15
Ω
Rise/Fall Time, RL = 50Ω, λ=900nm:
10% to 90% points
90% to 10% points
tr
tf
3
3
4
4
ns
1 A specific value of Vop is supplied with each device when the photodiode is operated at this voltage, the device will meet the electrical characteristics limits shown above, the voltage value will be within the range of 275 to 425 volts.
Dimensional Outline and Pin Connections
描述 [描述] Si APD四象限探测器 - 1.5 mm - 900 nm