C30645
Large Area InGaAs Avalanche Photodiodes
Key Features
· Spectral response 1100 - 1700 nm
· High responsivity
· Low dark current and noise
· Large area
· RoHS-compliant
· Available with lead-solder
Applications
· Eye-safe Laser Range Finding
· Optical time-domain reflectometer (OTDR)
· Optical communication systems
The C30645 and C30662 Series Avalanche Photodiodes are high speed, large area lnGaAs/lnP APDs that provide large QE, high responsivity, and low noise.
Excelitas Technologies’ C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency, (QE), high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1550 nm, suitable for use in eye-safe laser range finding systems.
These APDs are supplied in a hermetically sealed TO-18 package or on a ceramic carrier. Custom packaging is also available. Please contact Excelitas to discuss the packaging in further detail. Excelitas is committed to supplying the highest quality product to our customers.
Excelitas Technologies is certified to meet ISO-9001 and are designed to meet MIL-STD-883 and/or MIL-STD-750 specifications.
All devices undergo extended burn-in and periodic process qualification programs to assure high reliability.
Table 1: Electrical Characteristics at TA = 22°C
C30645
C30662
C30662-1
Conditions
Parameter
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Units
Active Diameter
80
200
200
µm
Breakdown voltage (Vbr)
45
50
70
45
50
70
45
50
70
V
Operation Point from Breakdown (Vbr-Vop)
4.0
V
(@ M=10) (Note 6)
Temperature Coefficient of Vbr for Constant Gain
0.14
0.20
0.14
0.20
V / deg C
Responsivity (@ 1550 nm)
9.3
9.3
A/W
Dark Current (@ M=10) (id)
3
50
45
150
nA
Spectral Noise Current (@ M=10) (in)
0.2
1.0
0.7
1.5
pA/rt(Hz)
Capacitance
1.25
2.5
pF
Bandwidth (@ M=10)
1000
600
850
MHz
Quantum Efficiency (1300-1550 nm)
75
75
%
Maximum Useable Gain (M)
10
20
10
20
No units
Notes for Table 1
1. A specific voltage, , is supplied with each device. When the photodiode is operated at this voltage (at 22 °C), the device will meet the electrical characteristic limits shown above. The voltage value will be within the range of 45 to 70 volts.
2. The voltage dependence of the gain, , for gains above 4, is given approximately by the following empirical formula yielding a rough approximation of the sensitivity: where: K will vary from APD to APD, but should be within 40-50 for most InGaAs APDs
3. Gain, and quantum efficiency, , are not directly measurable quantities. The numbers quoted are estimated typical values. Gain, quantum efficiency and responsivity are related by the following:expressed in A/W where: η is the quantum efficiency, expressed in % λis the wavelength in units of mm, and M is the APD gain
4. The detector noise current expressed in 1/√ Hz, is given by the following expression:
where:
q is the electron charge,
, is the excess noise factor, around 5.5 for InGaAs,
Keff is ionization coefficient, typically around 0.45 for InGaAs, and
is and ib are the un-multiplied and multiplied portions of the dark current, respectively.
The total dark current is given by:
it=is+ibM
However, since both is and ib are somewhat voltage dependent, and M is not directly measurable (see Note 3), it is not usually possible to determine both is and ib unambiguously. Since system performance depends on noise current and responsivity, these measurable quantities are the ones that have been specified.
5. Most devices can be operated at gains up to about 30 or more, but with values of noise current correspondingly higher, as indicated by the discussion in Note 4 above.
6. The product C30662EH can be ordered with a guaranteed minimal delta of the operation voltage bias from the voltage breakdown (Vbr-Vop ),also known as deltaV or dV. Using the “-1” suffix specifies a dV larger than 4.0 V. Please contact us for more information.
Table 2: Absolute Maximum Rating, Limiting Values
Parameter
Units
Forward Current
5
mA
Total Power dissipation
20
mW
Storage Temperature
-60 to +125
°C
Operating Temperature
-20 to +70
°C
Soldering Temperature (10 seconds)
250
°C
Table 2: Ordering Guide and Packaging information
Model
Active area
Package Type
Package reference
Window
RoHS
compliance?
Additional screening
Material1
Aperture
C30645ECERH
80µm diameter
Ceramic Carrier
See Figure 4
N/A
N/A
Yes
C30645E
Standard TO-18
See Figure 5
Silicon
Small
No
C30645EH
Standard TO-18
See Figure 5
Silicon
Small
Yes
C30645EH-1
Standard TO-18
See Figure 6
Glass
Large
Yes
C30662ECERH
200µm diameter
Ceramic Carrier
See Figure 4
N/A
N/A
Yes
C30662ECERH-1
Ceramic Carrier
See Figure 4
N/A
N/A
Yes
dV > 4.0V
C30662E
Standard TO-18
See Figure 5
Glass
Small
No
C30662EH
Standard TO-18
See Figure 6
Glass
Large
Yes
C30662EH-1
Standard TO-18
See Figure 6
Glass
Large
Yes
dV > 4.0V
C30662EH-3
Standard TO-18
See Figure 5
Glass
Small
Yes
Notes: 1. Glass material is transparent for visible and IR wavelengths, while Silicon blocks visible light up to about 1.1µm.
商品属性 [波长] 1100 - 1700 nm [封装方式] TO-18