C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types
N-type Silicon PIN Photodetectors
Key Features
- High responsivity
- Fast response time
- Low operating voltage
- Low capacitance
- Hermetically sealed packages
- RoHS Compliant
Applications
- Laser detection systems
- Photometry
- Data transmission
- Instrumentation
- High speed switching
Overview
The family of N-type silicon PIN photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nanometers.
The wide range of photosensitive areas making up this series provides a broad choice in photosensitive areas and in time response characteristics. All the photodiodes are hermetically sealed in TO packages, and is anti-reflection coated to enhance responsivity at 900nm.
These characteristics make the devices highly useful in HeNe and GaAs laser detection systems and in optical demodulation, data transmission, ranging, and high-speed switching applications.
Recognizing that different applications have different performance requirements, Excelitas offers a wide range of customizations of these photodiodes to meet your design challenges. Responsivity and noise screening, custom device testing and packaging are among many of the application specific solutions available.
Table 1 ̶ Mechanical and Optical Characteristics
Parameter
Symbol
C30807EH
C30808EH
C30822EH
C30809EH
C30810EH
Unit
Shape
Circular
Circular
Circular
Circular
Circular
Package
TO-18
TO-5
TO-8
TO-8
TO-36
Photosensitive Surface:
Useful area
Useful diameter
A
d
0.8
1
5
2.5
20
5
50
8
100
11
mm2
mm
Field of View:
Nominal field of view α (see Figure 5)
Nominal field of view α’ (see Figure 5)
FoV
60
88
85
129
94
142
56
147
77
138
Degrees
Table 2 ̶ Electro-Optical Characteristics
Case Temperature Ta = 22 °C; at the DC reverse operating voltage V=45V, Vop
Parameter
Symbol
C30807EH
C30808EH
C30822EH
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Breakdown Voltage
Vbr
100
100
100
V
Operating Voltage
Vop
45
45
45
V
Responsivity
at 900 nm
at 1060 nm
R
0.5
0.1
0.6
0.15
0.5
0.1
0.6
0.20
0.5
0.1
0.6
0.20
A/W
Quantum Efficiency
at 900 nm
at 1060 nm
Q.E.
70
12
83
17
70
12
83
23
70
12
83
23
%
Total Dark Current
at Vop = 10V
at Vop = 45V
Id
2
10
1
50
5
30
25
150
10
50
50
250
nA
Noise Current
f=10kHz, Δf=1.0Hz
in
0.06
0.42
0.1
0.7
0.13
0.9
pA/√Hz
Capacitance
Cd
2.5
3
5
10
12
20
pF
Noise Equivalent Power
at 900 nm
at 1060 nm
f – 100kHz, ∆f – 1.0Hz
NEP
0.1
0.4
0.7
2.8
0.17
0.50
1.2
3.5
0.22
0.65
1.5
4.5
pW/√Hz
Rise/Fall Time, RL = 50Ω,
900nm:
10% to 90% points 90% to 10% points
tr
tf
3
6
5
10
12
13
20
20
12
13
20
20
ns
Table 2 (continued) ̶ Electro-Optical Characteristics
Case Temperature Ta = 22 °C; at the DC reverse operating voltage V=45V, Vop
Parameter
Symbol
C30809EH
C30810EH
Unit
Min
Typ
Max
Min
Typ
Max
Breakdown Voltage
Vbr
100
100
V
Operating Voltage
Vop
45
45
V
Responsivity
at 900 nm
at 1060 nm
R
0.5
0.1
0.6
0.20
0.5
0.1
0.6
0.20
A/W
Quantum Efficiency
at 900 nm
at 1060 nm
Q.E.
70
12
83
23
70
12
83
23
%
Total Dark Current
at Vop = 10V
at Vop = 45V
Id
25
70
130
350
83
300
400
1500
nA
Noise Current
f=10kHz, Δf=1.0Hz
in
0.15
1.1
0.3
2.1
pA/√Hz
Capacitance
Cd
25
45
45
90
pF
Noise Equivalent Power
at 900 nm
at 1060 nm
f – 100kHz, ∆f – 1.0Hz
NEP
0.2
0.75
1.6
5.5
0.45
1.5
3.6
11
pW/√Hz
Rise/Fall Time, RL = 50Ω:
10% to 90% points
90% to 10% points
tr
tf
12
13
20
20
15
20
25
30
ns
Table 3-Absolute – Maximum Ratings, Limiting Values
Parameter
Symbol
Minimum
Maximum
Unit
Remarks/Conditions
Reverse Bias Voltage
100
V
Photocurrent Density :
average value
peak value
Jp
5
20
mA/mm2
Continuous operation, at Ta = 22 °C
Forward Current:
average value
peak value
IF
10
20
mA
Continuous operation, at Ta = 22 °C
(For 1 second duration, non-repetitive)
Storage Temperature
Tstg
-60
100
°C
Operating Temperature
To
-40
80
°C
Soldering
200
°C
5 seconds, leads only
Figure 1 ̶ Typical Spectral Responsivity Characteristics
Figure 2 ̶ Typical Noise Current as a function of Frequency, Ta=22°C, Vop= 45V
Figure 3 ̶ Typical Dark Current as a function of Ambient Temperature, Vop = 45V
Figure 4 ̶ Approximate Field of View
描述 [描述] 硅PIN光电二极管,在TO-5密封封装中有一个2.5 mm感光直径芯片,专为300至1100 nm波长范围而设计。