FND-100 series
Ultra-Fast Photodiode
Key Features and Benefits
- Large Active Area
- Wide Spectral Range
- Low NEP
- High Responsivity
- Ultra-Fast Rise and Fall Time
- Isolated Photodiode Chip
Applications
- Laser detection systems
- Laser power control systems
- Fast pulse detection in semiconductor inspection systems
- Instrumentation
- High speed switching
Overview
The FND-100 series devices are high quality, large area, high speed, N-type Si PIN photodiodes in hermetically sealed TO-5 package designed for the 400 to 1100 nm wavelength region.
The FND-100QH has a quartz window, extending the photodiode’s UV response down to 200 nm. Along with a fast rise and fall time of <1 ns, the high responsivity and low NEP makes this diode ideal for many fast pulse instrumentation applications.
Table 1 – Electro-Optical Characteristics
Operating data and specifications at 23˚C − typical performance at 90V voltage bias
Parameter
Symbol
Minimum
Typical
Maximum
Units
Active area
5.1
mm²
Spectral range
FND-100QH
FND-100GH
200
400
1150
1150
nm
Responsivity
at 850nm (QH/GH)
at 254nm (QH only)
R
0.5
0.045
0.6
A/W
Bandwidth 50 Ω load
350
MHz
Rise time, RL = 50 Ω
tr
<1
ns
Operating voltage
Vop
0
100
V
Breakdown voltage1
Vbr
125
150
V
Capacitance
Cd
8.5
10
pF
Dark current
Id
10
25
nA
Series resistance
20
Ω
Noise Current
in
60
90
fA/√Hz
Noise equivalent power
(850 nm, 10 MHz, 1)
NEP
0.10
0.18
pW/√Hz
Operating Temperature QH
GH
To
-40
-40
70
125
°C
Package Style
TO 5
Field of View2:
Nominal field of view α /2
Nominal field of view α’/2 (See Figure 3)
FoV
0
74
Degrees
Note 1: Breakdown voltage measured at 100µA dark current
Note 2:α/2 angle limited by internal aperture
Figure 1 – Typical Spectral Response
Figure 2 – Mechanical Data and PIN Configurations
Figure 3 – Approximate field of view
描述 [描述] 2.5mm感光直径的大面积硅PIN光电二极管,采用密封TO-5封装,带有玻璃窗口。该光电二极管提供从400 nm到1150 nm的高响应度