HPR series – HPR-1100BGH
Hybrid PIN Receiver Module
Key Features
-Built-in Low Noise Amplifier
- Shielded J-FET Amplifier for best SNR
- Large Active Area
- Wide Spectral Range
- RoHS compliant
Applications
- Low bandwidth, high-gain applications
- Optical Power Meter
- Fast laser trigger
- Instrumentation
- Simplified receiver for high-performance shortrange communication links
All specifications are referring to an ambient temperature of TA = 23 °C, 0 V Photodiode Bias and ±15 V Amplifier Bias, operated with a 200 MΩ feedback resistor.
Table 1: Key parameters
Parameter
Symbol
Min
Typ
Max
Unit
Photodiode Bias Voltage
VOP
0
V
Spectral Range
Δλ
400
1150
nm
Peak Responsivity
λpeak
900
nm
Responsivity1
R900
130
MV/W
Note 1: The responsivity of the receiver depends on the selected feedback resistor. Please refer to Table 5 and Figure 2.
Table 2: Ordering Information
Parameter
HPR-1100BGH
Units
Active Area Shape
Circular
Useful Area
5.1
mm2
Useful Diameter
80.6
mm
Table 3: Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Photodiode Bias Voltage
VOP
0
V
Operating Temperature
TOp
0 … 70
°C
Soldering Temperature3
TP
260
°C
Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Note 2: Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 3: 5 seconds, leads only.
Table 4: Amplifier Specifications
Parameter
Symbol
Minimum
Typical
Maximum
Units
Bias Current1
30
pA
Offset Current
3
pA
Offset Voltage2
3
mV
Offset Voltage Drift
5
µV/°C
Output Resistance
250
Ω
Slew Rate
12
V/µs
Amplifier Supply Voltage
±5
±18
V
Amplifier Supply Current
5
mA
Power Consumption
150
mW
Note 1: Doubles for every 10 ⁰C increase in operating temperature.
Note 2: Can be adjusted to 0 V with external trim potentiometer, please refer to Figure 2.
Table 5: Photodiode Specifications
Parameter
Symbol
Minimum
Typical
Maximum
Units
Peak Unity Responsivity1
RPD
0.6
A/W
Bandwidth2
f3dB
1100
Hz
Rise Time / Fall Time3
tr / tf
32
µs
Dark Noise4
VN
4.0
µV/√Hz
Noise Equivalent Power2,5
NEP
0.03
pW/√Hz
Field of View6
α
1
Degrees
α'
104
Note 1: Unity Responsivity is defined as the intrinsic Responsivity of the Photodiode. The final Responsivity is dependent on the used feedback
resistor and can be obtained by with R the final
responsivity, RPD the unity responsivity and RF the feedback resistor value.
Please refer also to Figure 2.
Note 2: Operational performance with recommended feedback resistor of 200 MΩ, use of different feedback resistor values will modify system NEP
and bandwidth.
Note 3: As estimated by
Note 4: Due to the natural fluctuations of charge carriers the PIN diode will also generate noise when not illuminated. Since the noise characteristics
and hence the signal-to-noise ratio (SNR) are dependent on the bandwidth (f3dB) and operating wavelength (λ) inside the final system the illuminated noise
needs to be considered. Hence the SNR is defined as
with q the charge carrier and P the incident optical power in W.
Note 5: The NEP is specified in dark conditions and defined as
Note 6: Please refer to Figure 4
Figure 3: HPR-1100BGH Mechanical and Electrical Data
Note: Distance of outer window to active photodiode surface is nominally 1.98 mm.
Figure 4: Approximate field of view
Note 1: For incident radiation at angles ≤
描述 [描述] 大面积硅PIN放大器模块,具有2.5毫米感光直径芯片,采用密闭式TO封装。