VTB Process Photodiode VTB8440BH, 8441BH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See alsoVTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB8440BH
VTB8441BH
UNITS
Min.
Typ.
Max.
Min.
Typ.
Max.
ISC
Short Circuit Current
H = 100fc, 2850K
4
5
4
5
µA
TC ISC
ISC Temperature Coefficient
2850K
.02
.08
.02
.08
%/°C
VOC
Open CircuitVoltage
H = 100fc, 2850K
420
420
mV
TC VOC
VOC Temperature Coefficient
2850K
-2.0
-2.0
mV/°C
ID
Dark Current
H = 0, VR = 2.0V
2000
100
pA
RSH
ShuntResistance
H = 0, V = 10mV
.07
1.4
GΩ
TC RSH
RSH Temperature Coefficient
H = 0, V = 10mV
-8.0
-8.0
%/°C
CJ
Junction Capacitance
H = 0, V = 0
1.0
1.0
nF
λrange
Spectral Application Range
330
720
330
720
nm
λp
Spectral Response - Peak
580
580
nm
VBR
Breakdown Voltage
2
40
2
40
V
θ1/2
Angular Resp. - 50% Resp. Pt.
±50
±50
Degrees
NEP
Noise EquivalentPower
1.1 x 10-13 (Typ.)
2.4x 10-14 (Typ.)
W⁄ √Hz
D*
Specific Detectivity
2.2 x 1012 (Typ.)
9.7 x 1012 (Typ.)
cm√Hz⁄W
描述 [描述] 采用带透明环氧树脂保护层的8 mm凹陷式陶瓷封装的蓝光增强型硅光电二极管。