VTP Process Photodiodes VTP3410LAH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a long T- 1, endlooking package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See alsoVTP curves, pages 45-46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP3410LAH
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H = 100fc, 2850K
15
22
µA
TC ISC
ISC Temperature Coefficient
2850K
.26
%/°C
VOC
Open CircuitVoltage
H = 100fc, 2850K
350
mV
TC VOC
VOC Temperature Coefficient
2850K
-2.0
mV/°C
ID
Dark Current
H = 0, VR = 50V
35
nA
RSH
ShuntResistance
H = 0, V = 10mV
10
GΩ
CJ
Junction Capacitance
H = 0, V = 3V
25
pF
Re
Responsivity
940nm
.013
A/(W/cm2)
SR
Sensitivity
@ Peak
.55
A/W
λrange
Spectral Application Range
700
1150
nm
λp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
30
140
V
θ1/2
Angular Resp. - 50% Resp. Pt.
±20
Degrees
NEP
Noise EquivalentPower
1.9x 10-13 (Typ.)
W⁄ √Hz
D*
Specific Detectivity
5.3 x 1011 (Typ.)
cm √Hz⁄W
描述 [描述] 一种采用可见光屏蔽、端面封装、长条T1滤镜封装的硅光电二极管