800nm相位调制器
The Photline NIR-MPX800 series are phase modulators especially designed to operate in the 800 nm wavelength band. They are available with various modulation bandwidth, from low frequency to 20 GHz and beyond.
Like all iXBlue Near InfraRed (NIR) modulators, the Photline NIR-MPX800 series use a proton exchanged based waveguide process that confers them an unparalleled stability and a high photo-refractive threshold.
FEATURES
• High optical power handling
• High Bandwidth (> 18 GHz)
• High stability
• Low Vπ
• Low insertion loss
APPLICATIONS
• Interferometric based sensors
• Quantum optics
• Frequency shifting
• Pound-Drever-Hall locking
OPTIONS
• Hermetic sealing
• 20 GHz version
• 895 nm, 915 nm and 935 nm versions
RELATED EQUIPMENTS
• RF amplifiers
• NIR-MX800-LN intensity modulators
NIR-MPX800-LN-0.1 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
780
850
890
nm
Electro-optical bandwidth
-
150
-
MHz
Vp RF @50 kHz
-
2
3
V
Insertion loss
-
3.5
4.5
dB
Specifications given at 25 °C, 850 nm.
NIR-MPX800-LN-05 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
780
850
890
nm
Electro-optical bandwidth
5
-
-
GHz
Vp RF @50 kHz
-
3
4
V
Insertion loss
-
3.5
4.5
dB
Specifications given at 25 °C, 850 nm.
NIR-MPX800-LN-10 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
780
850
890
nm
Electro-optical bandwidth
10
12
-
GHz
Vp RF @50 kHz
-
4
5
V
Insertion loss
-
3.5
-
dB
Specifications given at 25 °C, 850 nm.
NIR-MPX800-LN-20 series Performance Highlights
Parameter
Min
Typ
Max
Unit
Operating wavelength
780
850
890
nm
Electro-optical bandwidth
16
20
-
GHz
Vp RF @50 kHz
-
4
5
V
Insertion loss
-
3.5
-
dB
Specifications given at 25 °C, 850 nm.
NIR-MPX800-LN-0.1
150 MHz Phase Modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes
100
150
-
MHz
Vπ RF @50 kHz
Vπ RF50 kHz
RF electrodes
-
2
4
V
RF input impedance
Zin-RF
-
-
10 000
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
780
850
890
nm
Insertion loss
IL
Without optical connectors
-
3.5
4.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 850 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
Modulation voltage range
EVin
-20
20
V
Optical input power
OPin
-
14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX800-LN-05
5 GHz Phase modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
5
-
-
GHz
Ripple S21
ΔS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes
-
-12
-10
dB
Vπ RF @50 kHz
VπRF50 kHz
RF electrodes
-
3
4
V
RF input impedance
Zin-RF
-
-
50
-
W
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
780
850
890
nm
Insertion loss
IL
Without optical connectors
-
3.5
4.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 850 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Optical input power
OPin
-
14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX800-LN-10
10 GHz Phase modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
10
12
-
GHz
Ripple S21
ΔS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes
-
-12
-10
dB
Vπ RF @50 kHz
Vπ RF50 kHz
RF electrodes
-
4
5
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, , MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
780
850
890
nm
Insertion loss
IL
Without connectors
-
3.5
4.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 850 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Optical input power
OPin
-
14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
NIR-MPX800-LN-20
20 GHz Phase modulator
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Electro-optic bandwidth
S21
RF electrodes, from 2 GHz
16
20
-
GHz
Ripple S21
ΔS21
RF electrodes
-
0.5
1
dB
Electrical return loss
S11
RF electrodes, 0 - 16 GHz
-
-12
-9
dB
Vπ RF @50 kHz
Vπ RF50 kHz
RF electrodes
-
4
5
V
RF input impedance
Zin-RF
-
-
50
-
Ω
Optical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Crystal
-
-
Lithium Niobate X-Cut Y-Prop, , MgO doped
Waveguide process
-
-
Proton exchange
Operating wavelength
λ
-
780
850
890
nm
Insertion loss
IL
Without connectors
-
3.5
4.5
dB
Optical return loss
ORL
-
-40
-45
-
dB
All specifications given at 25 °C, 850 nm, unless differently specified.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input power
EPin
-
28
dBm
Optical input power
OPin
-
14
dBm
Operating temperature
OT
0
+70
°C
Storage temperature
ST
-40
+85
°C
Mechanical Diagram and Pinout
All measurements in mm
Port
Function
Note
IN
Optical input port
Polarization maintaining 800 nm
Corning 85-U25D length : 1.5 meter, buffer diameter : 900 um
OUT
Optical output port
Polarization maintaining 800nm
Corning 85-U25D length : 1.5 meter, buffer diameter : 900 um
RF
RF input port
Wiltron female K
Ordering information
NIR-MPX800-LN-XX-Y-Z-AB-CD
XX = Bandwidth : 0.1 150 MHz 05 5 GHz 10 10 GHz 20 20 GHz
Y = Input fiber : P Polarisation maintaining S Standard single mode
Z = Input fiber : P Polarisation maintaining S Standard single mode
AB = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
商品属性 [操作波长] 780nm-890nm [带宽] 150MHz [插入损耗] 3.5dB