12 Gbps High Output Voltage Driver Module
The DR-DG-10-HO is a driver module optimized for digital applications requiring an upper operation voltage at 12.5 Gbps. It exhibits 12.5 Vpp output voltage and 35 dB gain up to 7 GHz.
The DR-DG-10-HO module is especially useful for driving LiNb03 modulators with 12 Gbps DPSK and 2 x 12 Gbps (D)QPSK modulation formats.
It is also a key device for multi-level modulation formats and for driving phase modulators. It is operated from a single power supply voltage for safety and ease of use and offers output voltage control. The DR-DG-10-HO comes with SMA type RF connectors (female in, male out) and with an optionnal heat sink. It is a non-inverting and single ended amplifier.
FEATURES
• High output voltage 12 Vpp
• High gain 35 dB
• High SNR
• Single voltage power supply
APPLICATIONS
• LiNbO3 & InP modulators
• 12 Gbps DPSK
• 2x12 Gbps (D)QPSK
• Research & Development
OPTIONS
• Heat-sink
Performance Highlights
Parameter
Min
Typ
Max
Unit
Cut-off Frequencies
50 k
-
8 G
Hz
Output Voltage
-
12
-
Vpp
Gain
-
30
-
dB
Saturated Power
-
26
-
dBm
Added Jitter
-
1.25
-
ps
Rise / Fall Times
-
12
-
ps
Measurements for Vbias = 12 V, Vamp = 1.2 V, Ibias = 420 mA
12.5 Gbps Output Response
DC Electrical Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage (fixed)
Vbias
-
12
-
V
Current consumption
Ibias
-
0.420
-
A
Gain control voltage
Vamp
0
1.4
-
V
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Lower frequency
f3db, lower
-3 dB point
45
50
-
kHz
Upper frequency
f3db, upper
-3 dB point
6
8
-
GHz
Gain
S21
Small signal
-
30
-
dB
Gain ripple
-
< 8 GHz
-
±1.5
-
dB
Input return loss
S11
10MHz < f < 10 GHz
-
-10
-
dB
Output return loss
S22
10MHz < f < 10 GHz
-
-10
-
dB
Output voltage
Vout
Vin = 0.5 Vpp@10.7Gbps
6
12
12.5
Vpp
Rise time / Fall time
tr / tf
20 % - 80 %
-
24.5 / 24.5
-
ps
Added jitter
JRMS
JRMS=√ J2RMS-total- J2RMS-source
-
1.25
-
ps
Power dissipation
P
Vout=12Vpp
-
3
-
W
Conditions: Vin = 0.5 Vpp, Tamb = 25 °C, 50 W system
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input voltage
Vin
-
1
Vpp
Power Supply Voltage
Vbias
11.5
13
V
DC current
Ibias
-
0.45
A
Gain control voltage
Vamp
0
2
V
Power dissipation
Pdiss
-
5.8
W
Temperature of operation
Top
-5
+50
°C
Storage temperature
Tst
-40
+70
°C
S21 Parameter Curve
Conditions: Vbias = 12 V, Vamp = 0.6 V, Ibias = 455mA
Group Delay Parameter Curve
Conditions: Vbias = 12 V, Vamp = 0.6 V, Ibias =455mA
S22 Parameter Curve
Conditions: Vbias = 12 V, Vamp = 0.65V, Ibias = 319 mA
S11Parameter Curve
Conditions: Vbias = 12 V, Vamp = 0.6 V, Ibias =455mA
S12 Paremeter Curve
Conditions: Vbias = 12 V, Vamp = 0.6 V, Ibias =455mA
Typical Output Voltage Amplitude vs Vamp
Conditions: Vbias = 12 V, Vamp = 0.6 V, Ibias =455mA
Eye Diagrams
Electrical Schematic Diagram
Mechanical Diagram and Pinout
All measurements in mm
The heatsinking of the module is necessary. It’s user responsability to use an adequate heatsink. Refer to the iXBlue recommended heatsink.
PIN
Function
Unit
IN
RF In
SMA - connector female
OUT
RF Out
SMA - connector male
Vbias
Power supply voltage
Set a typical operating specification
Vamp
Output voltage amplitude adjustment
Adjust for gain control tuning
Mechanical Diagram And Pinout With HS-HO1 Heatsink
All measurements in mm