10 GHz Analog Driver
The Photline DR-AN-10-MO is a wideband RF amplifier module designed for analog applications at frequencies up to 12 GHz.
The Photline DR-AN-10-MO is characterized by a low Noise Figure and a linear transfer function whose 1 dB compression point is above 21 dBm. It exhibits flat Group Delay and Gain curves with reduced ripple over the entire bandwidth.
The Photline DR-AN-10-MO operates from a single power supply for safety and ease of use, and offers gain control over 3 dB. The amplifier comes in a compact 52 mm x 25.6 mm housing with K type RF connectors (compatible SMA) and with an optional heat sink.
This amplifier module is ideally suited to drive optical modulators for analog applications.
FEATURES
• Output voltage up to 9 Vpp
• Linear amplifier
• Flat gain up to 12 GHz
• Single voltage power supply
• Low group delay variation
APPLICATIONS
• LiNbO3 modulators
• OFDM, RF over fiber
• Linear amplification
• Clock amplifier
• Research & Development
OPTIONS
• Heat-sink
Performance Highlights
Parameter
Min
Typ
Max
Unit
Cut-off frequencies
50 k
11 G
-
Hz
Output voltage
0
-
9
Vpp
Gain
28
30
-
dB
Saturated output power
23
-
-
dBm
Output power 1dB comp
21
22
-
dB
Harmonics
-
-
-15
dBc
Noise Figure
3
-
6
dB
Measurements for Vbias = 12 V, Vamp = 1.2 V, Ibias = 310 mA
DC Electrical Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage (fixed)
Vbias
-
12
13
V
Current consumption
Ibias
-
300
400
mA
Gain control voltage
Vamp
-
1.2
1.3
V
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Lower frequency
f3dB, lower
-3 dB point
50
-
-
kHz
Upper frequency
f3dB, upper
-3 dB point
-
11
-
GHz
Gain
S21
Small signal, f < 10 GHz
28
30
-
dB
Gain ripple
-
f < 10 GHz
-
-
±1.5
dB
Input return loss
S11
f < 10 GHz
-
-10
-
dB
Output return loss
S22
f < 10 GHz
-
-15
-
dB
Isolation
S12
f < 10 GHz
-
-60
-
dB
Output power 1dB
P1dB
2 GHz < f < 10 GHz
21
22
-
dBm
Saturated output power
Psat
2 GHz < f < 10 GHz
23
-
-
dBm
Output voltage
Vout
Linear
0
-
7
Vpp
Maximum swing
0
-
9
Noise Figure
NF
2 GHz < f < 10 GHz
3
-
6
dB
Harmonics
Harm
@P1dB, f < 5 GHz
-
-
-15
dBc
Power dissipation
P
Small signal
-
3.6
5.2
W
Conditions: S parameters conditions : Pin = -30 dBm, Tamb = 25 °C, 50 W system
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
RF input voltage
Vin
-
0.6
Vpp
Supply voltage
Vbias
0
13
V
DC current
Ibias
0
400
mA
Gain control voltage
Vamp
0
1.3
V
Power dissipation
Pdiss
-
5.2
W
Temperature of operation
Top
0
+50
°C
Storage temperature
Tst
-10
+70
°C
S21 and Group Delay Parameter Curves
Conditions: Vbias = 12 V, Vamp = 1.2 V, Ibias = 310 mA
S12Parameter Curve
Conditions: Vbias = 12 V, Vamp = 1.2 V, Ibias = 310 mA
S22 Parameter Curve
Conditions: Vbias = 12 V, Vamp = 1.2 V, Ibias = 310 mA
S11 Parameter Curve
Conditions: Vbias = 12 V, Vamp = 1.2 V, Ibias = 310 mA
Saturated Output Power Curve
Conditions: Vbias = 12 V, Vamp = 1.2 V, Ibias = 310 mA
Noise Figure Curve
Conditions: Vbias = 12 V, Vamp = 1.2 V, Ibias = 310 mA
Electrical Schematic Diagram
Mechanical Diagram and Pinout
All measurements in mm
The heatsinking of the module is necessary. It’s user responsability to use an adequate heatsink. Refer to the iXBlue recommended heatsink.
PIN
Function
Operational Notes
IN
RF In
K-connector female
OUT
RF Out
K-connector male
Vbias
Power supply voltage
Set at typical operating specification
Vamp
Output voltage amplitude adjustment
Adjust for gain control tuning
Mechanical Diagram and Pinout with HS-MO2 Heatsink
All measurements in mm