2051nm DM LASER
EP2051-DMH-B
SUPERIOR PERFORMANCE
Eblana Photonics EP2051-DMH-B combines Eblana’s patented Discrete-Mode (DM) technology with expert epistructure design, resulting in an advanced single mode, high power laser diode. This product is ideal for many applications including high power, high sensitivity CO2 detection, seed laser and next-gen WDM communications.
ELECTRO-OPTICAL CHARACTERISTICS* (TSUB = 15◦ C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Available Wavelength Range
λ
2049
2051
2053
nm
Wavelength tolerance
λspec
λ -2
λ
λ +2
nm
Side Mode Supression Ratio
SMSR
30
35
-
dB
Threshold Current (SOA = 100mA)
Ith
-
30
50
mA
Output Power in fibre (LD/SOA = 200/100mA)
Pf
8
10
-
mW
Optical linewidth
∆f
-
5
-
MHz
Temperature Tuning Coefficient
Tλ
-
0.1
-
nm/◦C
Current Tuning Coefficient
Iλ
-
3
-
pm/mA
Slope Efficiency (LD/SOA tied)
SE
0.04
0.06
-
mW/mA
Thermistor Resistance
RT
9.5
10
10.5
kΩ
Thermistor Temp. Coefficient
C
-
-4.4
-
%/◦C
∗CW bias unless otherwise stated
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Max Current per section (LD/SOA)
If
-
200
mA
Forward Voltage
Vf
-
2.5
V
TEC Current
ITEC
-
1.2
A
Reverse Voltage LD
Vr
-
2.0
V
Case Temperature∗
TCase
-20
65
◦C
Chip Submount Temperature
TSub
0
50
◦C
Storage Temperature
Tstorage
-40
85
◦C
∗For Tsub < 25◦C, Max Case Temperature should be derated to TCase,Max =Tsub + 40◦C
PACKAGING
The EP2051-DMH-B product series is offered in a 14-pin Butterfly package - Inquire for other packaging options. The standard package pinout is shown below, variations may be requested.
商品属性 [波长] 2051 nm [功率] 10 mW