Conduction-cooled QCW stacked array
QD-Q1yzz-A, QD-Q1yzz-B, QD-Q1yzz-BS, QD-Q1yzz-G and QD-Q1yzz-K are conductively cooled laser diode arrays. These stacked arrays can be built with 2 to 19 diode bars of 60 W QCW to 400 W QCW. The laser arrays benefit from a fully developed technology, designed for improved efficiency (up to 65 % @ 808 nm and 72 % @ 940 nm) and reliable operation (above 10 billion shots).
QCW operation
60 W to 400 W QCW per diode bar
Standard wavelength 795 to 830 nm, 880 nm, 9xx nm
Space qualified technology (vacuum, irradiation)
Low thermal resistance assembly package
Mechanically robust, shock and vibration resistant
Applications
Ablation
Engraving
Flat panel display
LIBS
LIDAR
LIF
Surface treatment
Spectroscopy
Marking
Shockwave generation
Pumping
Remote sensing
Pointer
Designator
Illuminator
Range finder
Defense & Security
etc.
Specifications
Parameters QD-Qxyzz-A QD-Qxyzz-B QD-Qxyzz-BS QD-Qxyzz-G QD-Qxyzz-K Number of diode bars (zz =)
2 to 6
1 to 12
1 to 19
1 to 16
1 to 8
Pitch between diode bars (µm)
330 to few 1000s
Emitting area (mm²)
10 x (zz - 1)* pitch
QCW optical power per diode bar (W)
up to 400
QCW Optical power (W)
up to 2400
up to 4400
up to 7000
up to 6000
up to 1600
Operating current (A)
@ 100 W / bar95 Typ. - 115 max.
Operating current (A)
@ 200 W / bar185 Typ. - 215 max.
Operating current (A)
@ 400 W / bar370 Typ. - 390 max.
Operating voltage (Volt)
< 2 / bar
Total efficiency (%)
58 % @ 808 nm
65 % @ 940/980 nmWavelength (nm)
790 to 980
Spectral width(nm) (FWHM)
3
Beam divergence (°C) (FWHM)
9 x 36
Specifications @ 25°C
Notes :
Standard Polarisation: TM or TE mode @ 808 nm, TE @ 9xx nm
Variation of wavelength with temperature is approximately 0.26 nm/°C
Tolerance on wavelength is +/- 3 nm, +/- 1,5 nm upon request
Double or triple Quantum Well bars available (ex: 400 W @ 200 A & 4 V)
Specifications are for nominal lifetime > 1. 109 pulses (for 200 µs pulse width)