EYP-DFB-0780-00080-1500-TOC03-0000
SINGLE FREQUENCY LASER DIODES
Distributed Feedback Laser
General Product Information
Product Application 780 nm DFB Laser
with hermetic 8-Pin TO Package (RoHS compliant)
including Monitor Diode, Thermoelectric Cooler and Thermistor
Spectroscopy
Metrology
THz Generation
Absolute Maximum Ratings
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Storage Temperature
TS
°C
-40
85
Stress in excess of one of the Absolute Maximum
Ratings may damage the laser. Please note that a
damaging optical power level may occur although the
maximum current is not reached. These are stress
ratings only, and functional operation at these or any
other conditions beyond those indicated under
Recommended Operational Conditions is not implied.
Operational Temperature at Case
TC
°C
-20
75
Operational Temperature at Laser Chip
TLD
°C
0
50
Forward Current
IF
mA
200 Reverse Voltage
VR
V
2 Output Power
Popt
mW
100 TEC Current
ITEC
A
1.8 TEC Voltage
VTEC
V
3.2
Recommended Operational Conditions
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Operational Temperature at Case
Tcase
°C
-20
65
Operational Temperature at Laser Chip
TLD
°C
5
40
measured by integrated Thermistor
Forward Current
IF
mA
180
Output Power
Popt
mW
20
80
Characteristics at TLD = 25° C at BOL
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments Center Wavelength
λC
nm
779
780
781
see images
Linewidth (FWHM)
Δλ
MHz
2
Temperature Coefficient of Wavelength
dλ / dT
nm / K
0.06
Current Coefficient of Wavelength
dλ / dI
nm / mA
0.003
Sidemode Supression Ratio
SMSR
dB
30
45
Popt = 80 mW
Characteristics at TLD = 25° C at BOL cont'd
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Laser Curren @ Popt = 80 mW
ILD
mA
180
Slope Efficiency
η
W / A
0.6
0.8
1.1
Threshold Current
Ith
mA
70
Divergence parallel (FWHM)
Θ‖
°
8
parallel to short axis of the housing
Divergence perpendicular (FWHM)
Θ⊥
°
21
parallel to long axis of the housing
Degree of Polarization
DOP
%
90
80 mW; E field parallel to long axis of housing
Monitor Diode
Parameter
Symbol Unit
min
typ
max
Measurement Conditions / Comments
Monitor Detector Responsivity
Imon / Popt μA/mW
1
20
UR = 5 V
Thermoelectric Cooler
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Current
ITEC
A
0.4
Popt = 80 mW, ΔT = 20 K
Voltage
UTEC
V
0.8
Popt = 80 mW, ΔT = 20 K
Power Dissipation (total loss at case)
Ploss
W
0.5
Popt = 80 mW, ΔT = 20 K
Temperature Difference
ΔT
K
50
Popt = 80 mW, ΔT = |Tcase - TLD|
Thermistor (Standard NTC Type)
Parameter
Symbol
Unit
min
typ
max
Measurement Conditions / Comments
Resistance
R
kΩ
10
TLD = 25° C
Beta Coefficient
β
3892
R1 / R2 = eβ (1/T1 - 1/T2) at TLD = 0° … 50° C
Steinhart & Hart Coefficient A
A
1.1293 x 10 -3 1/T = A + B(ln R) + C(ln R)3
Steinhart & Hart Coefficient B
B
2.3410 x 10 -4 T: temperature in Kelvin
Steinhart & Hart Coefficient C
C
8.7755 x 10 -8 R: resistance at T in Ohm
Pin Assignment
1
Thermoelectric Cooler (+)
5
Laser Diode Anode
2
Thermistor
6
Monitor Diode Anode
3
Thermistor
7
Photo Diode Cathode
4
Laser Diode Cathode
8
Thermoelectric Cooler (-)
All 8 pins are isolated from case.
Package Drawings
Typical Measurement Results
Performance figures, data and any illustrative material provided in this specification are typical and must be specifically confirmed in writing by eagleyard Photonics before they become applicable to any particular order or contract. In accordance with the eagleyard Photonics policy of continuous improvement specifications may change without notice.
商品属性 [波长] 780 nm [功率] 80 mW [激光器类型] DFB [封装方式] TO-3 (Peltier)