Photodiode C30950EH
Silicon Avalanche Photodiode Preamplifier Module
Key Features
· System Bandwidth (3 dB Point) : DC to 50 MHz, 100 MHz, 200 MHz
· Noise Equivalent Power (NEP) at TA= 25°C :
0.029 pW/√Hz at 900 nm (50 MHz)
0.057 pW/√Hz at 830 nm (100 MHz)
0.120 pW/√Hz at 830 nm (200 MHz)
· Spectral Response Range (10% Points): 400 to 1000 nm
· Lower Power Consumption (60 mW typ.)
· Wide Range of Amplifier Operating Voltages
· 50Ω DC coupling capability
· Hermetically-Sealed Modified TO-8 Packages
· High Reliability
· Custom bandwidth and detector available on request
Applications
· Range Finding
· Confocal Microscope
· LIDAR
· Laser designation
· Scanning laser ophthalmoscope
Overview
The C30950EH is a Silicon Avalanche Photodiode with a hybrid preamplifier supplied in a single modified 12-lead TO-8 package.
The C30817EH avalanche photodiode used in this device is made using a “reach-through” structure which provides very good response between 400 and 1100nm and very fast rise and fall times at all wavelengths. The preamplifier section is designed to neutralize the input capacitance of a unity voltage gain amplifier. An emitter follower is used as an output buffer stage. To obtain the wideband characteristics, the output of this device should be AC (capacitively) coupled to a 50Ω termination.
Table 1. Performance Specifications
Test conditions: Case temperature = 22˚C, VCC= ±6 Volts, DC reverse operating (VOP) value supplied with each device1
Parameter
Symbol
Minimum
Typical
Maximum
Units
Temperature Coefficient of VOP for Constant Gain2
Vop
2.2
V/°C
Operating voltage for specified responsivity
Vop
275
425
Responsivity:
at 830 nm
at 900 nm
at 1064 nm
ZT (transimpedance gain)
AV (amplifier gain into 50Ω)
R
4.5x105
4.9x105
1.1x105
5.2x105
5.6x105
1.4x105
10K
0.75
V/W
Ω
Noise Equivalent Power :
at 830 nm
at 900 nm
at 1064 nm
(f – 100kHz, ∆f – 1.0Hz)
NEP
0.029
0.027
0.110
0.067
0.060
0.270
pW/Hz½
Output Spectral Noise Voltage Density:
f = 100 kHz – f-3dB
Output Impedance
System Bandwidth, f-3dB
35
15
15
50
35
50
nV/Hz½
Ω
MHz
Rise/Fall Time, RL = 50Ω:
10% to 90% points
90% to 10% points
(λ= 900 and 1060 nm)
tr
tf
7
7
10
10
ns
ns
Linear Output Voltage Swing
0.5
0.7
V
Voltage Swing
2.0
V
Output Offset Voltage
0.0
-0.8
-1.0
V
Supply Current
4.0
8.0
mA
Photosensitive Surface (C30817EH APD):
Useful area
Useful diameter
A
d
0.5
0.8
mm²
mm
Table 2. Absolute – Maximum Ratings, Limiting Values
Parameter
Symbol
Units
Photodiode Bias Voltage:
at TA=+70°C
at TA=-40°C
600
300
V
Photodiode Total Current3
average
peak
100
100
µA
mA
Storage Temperature
Tstg
-50 to +100
°C
Operating Temperature
To
-40 to +70
°C
Incident Radiant Flux
average value
peak value
φM
5.0
5.0
µW
mW
Preamplifier Voltage
maximum
minimum
±12.5
±5.5
V
商品属性 [波长] 400 to 1000 nm [封装方式] TO-8