C30659-1550-R2AH
Si and InGaAs APD Preamplifier Modules
Key Features
· System bandwidths of 50 and 200MHz
· Ultra low noise equivalent power (NEP)
· Spectral response range:
- With Si APD: 400 to 1100 nm
- With InGaAs APD: 1100 to 1700 nm
· Typical power consumption: 150 mW
· ±5 V amplifier operating voltages
· 50 Ω AC load capability (AC-Coupled)
· Hermetically-sealed TO-8 package
· High reliability
· Fast overload recovery
· Pin-to-pin compatible with the C30950
· Light entry angle, over 130°
· Model 1550E exhibits enhanced damage threshold
· RoHS-compliant
Applications
· LIDAR
· Range finding
· Laser designation
· Confocal microscopy
· High-speed, extreme low-light detection
· Distributed temperature sensing (DTS)
· Analytical instrumentation
· High-speed, free-space optical communication
Excelitas’ C30659-1550E InGaAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation.
The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.
The C30659 series features an inverting amplifier design with an emitter follower used as an output buffer stage. It remains pin-to-pin compatible with the C30950 Series. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a 50 Ω termination. The module must not be DC- coupled to loads of less than 2 kΩ. For field use, it is recommended that a temperature-compensated HV supply be employed to maintain a constant responsivity over temperature.
Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak response, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities.
Customization of the C30659 Series of APD Preamplifier Modules is available to meet your specific design challenges; modifications include bandwidth and gain optimization, use of different APDs, FC-connectorized packaging.
Table 1. Performance Specifications − C30659-1550/1550E Models (1550 nm peak response InGaAs APD)
Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled
Detector type
C30659-1550-R2AH
C30659-1550E-R2AH
(C30662EH APD)
C30659-1550-R08BH
C30659-1550E-R08BH
(C30645EH APD)
Parameter
Min
Typical
Max
Min
Typical
Max
Units
Active diameter
0.2
0.08
mm
Active area
0.03
0.005
mm²
Nominal field of view α (see Figure 8)
145
145
Degrees
Nominal field of view α’ (see Figure 8)
146
146
Degrees
System bandwidth, f-3dB
40
50
175
200
MHz
Bandwidth range
50
200
MHz
Temperature coefficient of Vop for constant gain
0.2
0.2
V/˚C
Vop for specified responsivity
40
Note 1
70
40
Note 1
70
V
Temperature sensor sensitivity (Note 2)
-1.8
-2.1
-2.4
-1.8
-2.1
-2.4
mV/˚C
Responsivity
at 1300 nm
at 1550 nm
Rf (Internal feedback resistor)
300
340
68
80
90
18
kV/W
kV/W
kΩ
Noise equivalent power (NEP) (Note 3)
Average from 100 kHz to f-3dB, ∆f = 1.0 Hz
at 1300 nm
at 1550 nm
Output spectral noise voltage
Averaged from 100 kHz to f-3dB
150
130
45
180
160
55
250
220
20
375
330
30
fW/√Hz
fW/√Hz
nV/√Hz
Output impedance
33
40
50
33
40
50
Ω
Rise time, tr (l = 1300 and 1550 nm) 10% to 90% points
7
2
ns
Fall time, tf (l = 1300 and 1550 nm) 90% to 10% points
7
2
ns
Recovery time after overload (Note 4)
150
150
ns
Output voltage swing (1 kΩ load) (Note 5)
2
3
2
3
Vpp
Output voltage swing (50 Ω load) (Note 5)
0.7
0.9
0.7
0.9
Vpp
DC output offset voltage
-1
0.25
1
-1
0.25
1
VDC
Positive supply current (V+)
20
35
20
35
mA
Negative supply current (V-)
10
20
10
20
mA
Notes:
1. A specific value of Vop is supplied with each device. The Vop value will be within the specified range. 2. If = 0.1 mA at 25˚C.
3. NEP is calculated as the output spectral noise voltage divided by the typical responsivity.
4. 0 dBm with 250 ns pulses.
5. Pulsed operation, AC-coupled.
Table 2. Absolute – Maximum Ratings, Limiting Values
Detector type
C30659-900-R8AH
(Silicon APD)
C30659-900-R5BH
(Silicon APD)
C30659-1060 Models
(Silicon APD)
C30659-1550(E) Models
(InGaAs APD)
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Units
Photodiode bias voltage (Note 1)
at TA = +70˚C
at TA = -40˚C
600
300
350
210
600
300
100
50
V
V
Incident radiant flux, ΦM, (Note 2)
average (Note 3)
peak (Note 4)
peak (Note 5)
0.1
50
0.1
50
0.1
50
4 (for -1550)
1000 (for 1550E)
2
mW
mW
kW/cm²
Case temperature
storage, Tstg
operating, TA
-50
-40
100
70
-50
-40
100
70
-50
-40
100
70
-50
-40
100
70
˚C
˚C
Preamplifier bias voltage
±4.5
±5.5
±4.5
±5.5
±4.5
±5.5
±4.5
±5.5
V
Notes:
1. The operating voltage (Vop) must remain below the breakdown voltage (Vbr), these values are worst-case estimates. HV voltage current should be limited externally to less than 1 mA.
2. As demonstrated in laboratory conditions.
3. Based on 0.5 W electrical power on the high voltage (HV) supply.
4. Test with 50 ns pulse width.
5. Tested at 1064 nm, 10 ns pulse width and 1 kHz pulse repetition rate.
Figure 1. Schematic Block Diagram − C30659 Series
Table 3 – Ordering guide
商品属性 [波长] 400 to 1100 nm/1100 to 1700 nm [封装方式] TO-8