CERLED®
Ceramic Chip SMD
SMD - Wide-Viewing Angle CR 50 TE Photo Transistor
Description
The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens.Special Type (CR50TE-DLF) with daylight
filter on request. Available on special order in 8 mm blister tape or solid strips of up to 12 pcs with a true pitch of 1.27 mm.
Features and Benefits
- Solid state ceramic chip
- Surface mounting device
- High thermal conductivity
- End - to - end and side - to - side stackable down to a pitch of 1.3 mm
- Solder pads conform with Mil-Std 883 B
Maximum Ratings at 25° C
Storage temperature
Tst
-25° C to 120° C
Operating temperature
Top
-25° C to 80° C
Soldering temperature
Tsold (10 s)
240° C
Optical and Electronic Characteristics at 25° C
min
typ
max
unit
conditions
Collector emitter breakdown voltage (VCE) 40 V I = 100 µA Dark current (ICEO)
400
nA
VCE : 20V, EV : 0Lx
Saturation voltage (VCEsat) 0.3 V IC : 2 mA, Ib : 1000 µA Wavelength of max. sensitivity (l max)
900
nm
Photo current rise / fall time (ton / toff)
4
µs
RL = 50 W, f = 1 MHz
Photosensitive area (A)
0.18
mm²
Power dissipation (Ptot)
200
mW
Current gain (hFE)
1000
1800
VCE = 5V, IB = 3 µA