VTB Process Photodiode
VTB1112BH
PACKAGE DIMENSIONiSnch (mm)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 110°C
Operating Temperature: -40°C to 110°C
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a lensed,dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTB1112BH
VTB1113BH
UNITS
Min.
Typ.
Max.
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
3.0
6.0
3.0
6.0
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.02
.08
.02
.08
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
420
420
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 2.0 V
100
20
pA
RSH
Shunt Resistance
H = 0, V = 10mV
.25
7.0
GW
TC RSH
RSHTemperature Coefficient
H= 0, V = 10mV
-8.0
-8.0
%/°C
CJ
JunctionCapacitance
H = 0, V = 0
.31
.31
nF
λrange
Spectral Application Range
330
720
330
720
nm
λp
Spectral Response - Peak
580
580
nm
VBR
Breakdown Voltage
2
40
2
40
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±15
±15
Degrees
NEP
Noise Equivalent Power
5.3 x 10-14 (Typ.)
1.1 x 10-14 (Typ.)
W / √Hz
D*
Specific Detectivity
2.4 x 1012 (Typ.)
1.2 x 1013 (Typ.)
cm √Hz / W
商品属性 [封装方式] TO-46 [波长] 330-720nm