VTB Process Photodiodes VTB5051UVJH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window.Chip is isolated from the case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 110°C
Operating Temperature: -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB5051UVJH
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
85
130
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.12
.23
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
490
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 2.0 V
250
pA
RSH
Shunt Resistance
H = 0, V = -10 mV
.56
GW
TC RSH
RSHTemperature Coefficient
H= 0, V = -10 mV
-8.0
%/°C
CJ
JunctionCapacitance
H = 0, V = 0
3.0
nF
SR
Sensitivity
365 nm
0.1
A/W
SR
Sensitivity
220 nm
.038
A/W
λrange
Spectral Application Range
200
1100
nm
λp
Spectral Response - Peak
920
nm
VBR
Breakdown Voltage
2
40
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±50
Degrees
NEP
Noise Equivalent Power
2.1 x 10-14 (Typ.)
W/√Hz
D*
Specific Detectivity
1.8 x 1013(Typ.)
cm √Hz/W
商品属性 [封装方式] TO-5 [波长] 200-1100 nm