VTB Process Photodiodes VTB6061UVH
PACKAGE DIMENSIONS inch (mm)
Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 110°C
Operating Temperature: -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB6061UVH
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
260
350
µA
TC ISC
ISCTemperature Coefficient
2850 K
.12
.23
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
490
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 2.0V
2.0
nA
RSH
Shunt Resistance
H = 0, V = 10mV
.10
GW
TC RSH
RSHTemperatureCoefficient
H= 0, V = 10mV
-8.0
%/°C
CJ
JunctionCapacitance
H= 0, V = 0
8.0
nF
SR
Sensitivity
365 nm
.10
A/W
SR
Sensitivity
220 nm
.04
A/W
lrange
Spectral Application Range
200
1100
nm
lp
Spectral Response - Peak
920
nm
VBR
Breakdown Voltage
2
40
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±55
Degrees
NEP
Noise Equivalent Power
5.7 x 10-14(Typ.)
W /√Hz
D*
Specific Detectivity
1.1 x 1103 (Typ.)
cm √Hz/ W
商品属性 [封装方式] TO-8 [波长] 200-1100 nm