VTB Process Photodiode VTB8441H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTB8440H
VTB8441H
UNITS
Min.
Typ.
Max.
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
35
45
35
45
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.12
.23
.12
.23
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
490
490
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 2.0 V
2000
100
pA
RSH
Shunt Resistance
H = 0, V = 10mV
.07
1.4
GW
TC RSH
RSHTemperature Coefficient
H= 0, V = 10mV
-8.0
-8.0
%/°C
CJ
JunctionCapacitance
H = 0, V = 0
1.0
1.0
nF
SR
Sensitivity
365 nm
.10
.10
A/W
λrange
Spectral Application Range
320
1100
320
1100
nm
λp
Spectral Response - Peak
920
920
nm
VBR
Breakdown Voltage
2
40
2
40
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±50
±50
Degrees
NEP
Noise Equivalent Power
5.9 x 10-14 (Typ.)
1.3 x 10-14(Typ.)
W/√Hz
D*
Specific Detectivity
3.9 x 1012(Typ.)
1.7 x 1013 (Typ.)
cm √Hz/W
商品属性 [波长] 320-1100 nm