VTB Process Photodiode VTB9412H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTB9412H
VTB9413H
UNITS
Min.
Typ.
Max.
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
8
13
8
13
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.12
.23
.12
.23
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
490
490
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 2.0 V
100
20
pA
RSH
Shunt Resistance
H = 0, V = 10mV
.25
7.0
GW
TC RSH
RSHTemperature Coefficient
H= 0, V = 10mV
-8.0
-8.0
%/°C
CJ
JunctionCapacitance
H = 0, V = 0
.31
.31
nF
SR
Sensitivity
365 nm
.09
.09
A/W
λrange
Spectral Application Range
320
1100
320
1100
nm
λp
Spectral Response - Peak
920
920
nm
VBR
Breakdown Voltage
2
40
2
40
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±50
±50
Degrees
NEP
Noise Equivalent Power
3.0 x 10-14 (Typ.)
5.9 x 10-15 (Typ.)
W /√Hz
D*
Specific Detectivity
4.2 x 1012(Typ.)
2.1 x 1013(Typ.)
cm √Hz/ W
商品属性 [波长] 320-1100 nm