Alternate Source/Second Source Photodiodes VTD31AAH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD31AAH
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 5 mW/cm2, 2850K
150
225
µA
TC ISC
ISCTemperature Coefficient
2850 K
.20
%/°C
VOC
Open Circuit Voltage
H= 5 mW/cm2, 2850K
350
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR= 15V
50
nA
CJ
JunctionCapacitance
H= 0, V = 0V
500
pF
SR
Sensitivity
@ Peak
.55
A/W
λrange
Spectral Application Range
400
1150
nm
λp
Spectral Response - Peak
860
nm
VBR
Breakdown Voltage
5
V
θ1/2
Angular Resp.-50%Resp. Pt.
±60
Degrees
商品属性 [波长] 400-1150nm